Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP8N90K5

STP8N90K5

MOSFET N-CH 900V 8A TO220

STMicroelectronics
2,665 -

RFQ

STP8N90K5

Scheda tecnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V - 5V @ 100µA - ±30V - - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N1R2CL C0G

TSM80N1R2CL C0G

MOSFET N-CH 800V 5.5A TO262S

Taiwan Semiconductor Corporation
3,432 -

RFQ

TSM80N1R2CL C0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN4R4-80PS,127

PSMN4R4-80PS,127

MOSFET N-CH 80V 100A TO220AB

Nexperia USA Inc.
3,108 -

RFQ

PSMN4R4-80PS,127

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 4.1mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 8400 pF @ 40 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix
3,697 -

RFQ

SIHH28N60E-T1-GE3

Scheda tecnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 98mOhm @ 14A, 10V 5V @ 250µA 129 nC @ 10 V ±30V 2614 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB180N04S302ATMA1

IPB180N04S302ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,962 -

RFQ

IPB180N04S302ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6020ENZ4C13

R6020ENZ4C13

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor
2,186 -

RFQ

R6020ENZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R5019ANJTL

R5019ANJTL

MOSFET N-CH 500V 19A LPTS

Rohm Semiconductor
1,000 -

RFQ

R5019ANJTL

Scheda tecnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) - - - - - - - 100W (Tc) 150°C (TJ) Surface Mount
SIHF16N50C-E3

SIHF16N50C-E3

MOSFET N-CH 500V 16A TO220

Vishay Siliconix
3,842 -

RFQ

SIHF16N50C-E3

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC30S2SN08NX2MA1

IPC30S2SN08NX2MA1

MV POWER MOS

Infineon Technologies
2,651 -

RFQ

IPC30S2SN08NX2MA1

Scheda tecnica

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
SIHP28N65EF-GE3

SIHP28N65EF-GE3

MOSFET N-CH 650V 28A TO220AB

Vishay Siliconix
3,728 -

RFQ

SIHP28N65EF-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N110

IXTA3N110

MOSFET N-CH 1100V 3A TO263

IXYS
2,687 -

RFQ

IXTA3N110

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1100 V 3A (Tc) 10V 4Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4H02NT3G

NTMFS4H02NT3G

MOSFET N-CH 25V 37A/193A 5DFN

onsemi
2,253 -

RFQ

NTMFS4H02NT3G

Scheda tecnica

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 193A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.1V @ 250µA 38.5 nC @ 10 V ±20V 2651 pF @ 12 V - 3.13W (Ta), 83W (Tc) 150°C (TJ) Surface Mount
IXTP76N25TM

IXTP76N25TM

MOSFET N-CH 250V 76A TO220

IXYS
3,205 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 44mOhm @ 38A, 10V 5V @ 250µA 92 nC @ 10 V ±20V 4920 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP120N10S403AKSA1

IPP120N10S403AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies
7,417 -

RFQ

IPP120N10S403AKSA1

Scheda tecnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP130N10T

IXFP130N10T

MOSFET N-CH 100V 130A TO220AB

IXYS
3,263 -

RFQ

IXFP130N10T

Scheda tecnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 1mA 104 nC @ 10 V - 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA50N25T

IXTA50N25T

MOSFET N-CH 250V 50A TO263

IXYS
2,699 -

RFQ

IXTA50N25T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 50mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65ET1-GE3

SIHB24N65ET1-GE3

MOSFET N-CH 650V 24A TO263

Vishay Siliconix
3,709 -

RFQ

SIHB24N65ET1-GE3

Scheda tecnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65ET5-GE3

SIHB24N65ET5-GE3

MOSFET N-CH 650V 24A TO263

Vishay Siliconix
2,448 -

RFQ

SIHB24N65ET5-GE3

Scheda tecnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120N08S403ATMA1

IPB120N08S403ATMA1

MOSFET N-CH 80V 120A TO263-3

Infineon Technologies
3,114 -

RFQ

IPB120N08S403ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.5mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0690N1507L

FDB0690N1507L

MOSFET N-CH 150V 3.8A TO263-7

onsemi
800 -

RFQ

FDB0690N1507L

Scheda tecnica

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.8A (Tc) 10V 6.9mOhm @ 17A, 10V 4V @ 250µA 115 nC @ 10 V ±20V 8775 pF @ 75 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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