Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDD86367

FDD86367

MOSFET N-CH 80V 100A DPAK

onsemi
1,666 -

RFQ

FDD86367

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 4.2mOhm @ 80A, 10V 4V @ 250µA 88 nC @ 10 V ±20V 4840 pF @ 40 V - 227W (Tj) -55°C ~ 175°C (TJ) Surface Mount
R6004JNJGTL

R6004JNJGTL

MOSFET N-CH 600V 4A LPTS

Rohm Semiconductor
1,095 -

RFQ

R6004JNJGTL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RD3S100CNTL1

RD3S100CNTL1

MOSFET N-CH 190V 10A TO252

Rohm Semiconductor
2,024 -

RFQ

RD3S100CNTL1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 190 V 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V 2.5V @ 1mA 52 nC @ 10 V ±20V 2000 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6509END3TL1

R6509END3TL1

650V 9A TO-252, LOW-NOISE POWER

Rohm Semiconductor
2,470 -

RFQ

R6509END3TL1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) Surface Mount
SI4488DY-T1-GE3

SI4488DY-T1-GE3

MOSFET N-CH 150V 3.5A 8SO

Vishay Siliconix
1,680 -

RFQ

SI4488DY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta) 10V 50mOhm @ 5A, 10V 2V @ 250µA (Min) 36 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP8N60C

FQP8N60C

MOSFET N-CH 600V 7.5A TO220-3

onsemi
1,051 -

RFQ

FQP8N60C

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM900N10CH X0G

TSM900N10CH X0G

MOSFET N-CH 100V 15A TO251

Taiwan Semiconductor Corporation
3,556 -

RFQ

TSM900N10CH X0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 1480 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD14N60ET1-GE3

SIHD14N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix
1,933 -

RFQ

SIHD14N60ET1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7145DP-T1-GE3

SI7145DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,735 -

RFQ

SI7145DP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 2.3V @ 250µA 413 nC @ 10 V ±20V 15660 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFI10NK60Z

STFI10NK60Z

MOSFET N-CH 600V 10A I2PAKFP

STMicroelectronics
1,426 -

RFQ

STFI10NK60Z

Scheda tecnica

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE820DF-T1-GE3

SIE820DF-T1-GE3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
730 -

RFQ

SIE820DF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 4.5V 3.5mOhm @ 18A, 4.5V 2V @ 250µA 143 nC @ 10 V ±12V 4300 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPH2R408QM,L1Q

TPH2R408QM,L1Q

MOSFET N-CH 80V 120A 8SOP

Toshiba Semiconductor and Storage
7,840 -

RFQ

TPH2R408QM,L1Q

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.43mOhm @ 50A, 10V 3.5V @ 1mA 87 nC @ 10 V ±20V 8300 pF @ 40 V - 3W (Ta), 210W (Tc) 175°C Surface Mount
STFI8N80K5

STFI8N80K5

MOSFET N-CH 800V 6A I2PAKFP

STMicroelectronics
1,490 -

RFQ

STFI8N80K5

Scheda tecnica

Tube SuperMESH5™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB8447L

FDB8447L

MOSFET N-CH 40V 15A/50A TO263AB

onsemi
1,472 -

RFQ

FDB8447L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 14A, 10V 3V @ 250µA 52 nC @ 10 V ±20V 2620 pF @ 20 V - 3.1W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB3682

FDB3682

MOSFET N-CH 100V 6A/32A TO263

onsemi
1,056 -

RFQ

FDB3682

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Ta), 32A (Tc) 6V, 10V 36mOhm @ 32A, 10V 4V @ 250µA 28 nC @ 10 V ±20V 1250 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C604NLT1G-UIL3

NTMFS5C604NLT1G-UIL3

MOSFET N-CH 60V 40A/287A 5DFN

onsemi
2,224 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 120 nC @ 10 V ±20V 8900 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2903ZSTRL

AUIRF2903ZSTRL

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies
3,779 -

RFQ

AUIRF2903ZSTRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

MOSFET N-CH 650V 20.3A PPAK 8X8

Vishay Siliconix
2,223 -

RFQ

SIHH21N65E-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 20.3A (Tc) 10V 170mOhm @ 11A, 10V 4V @ 250µA 99 nC @ 10 V ±30V 2404 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL4127PBF

IRFSL4127PBF

MOSFET N-CH 200V 72A TO262

Infineon Technologies
3,778 -

RFQ

IRFSL4127PBF

Scheda tecnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) - 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V - 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2804STRL

AUIRF2804STRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,221 -

RFQ

AUIRF2804STRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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