Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB24N65E-E3

SIHB24N65E-E3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix
3,257 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65E-GE3

SIHB24N65E-GE3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix
3,293 -

RFQ

SIHB24N65E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP185N55F3

STP185N55F3

MOSFET N-CH 55V 120A TO220AB

STMicroelectronics
2,693 -

RFQ

STP185N55F3

Scheda tecnica

Tube STripFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.8mOhm @ 60A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 6800 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG21N65EF-GE3

SIHG21N65EF-GE3

MOSFET N-CH 650V 21A TO247AC

Vishay Siliconix
3,585 -

RFQ

SIHG21N65EF-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ60N10T

IXTQ60N10T

MOSFET N-CH 100V 60A TO3P

IXYS
3,845 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±30V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK12A60W,S4VX

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage
2,471 -

RFQ

TK12A60W,S4VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 35W (Tc) 150°C (TJ) Through Hole
IRFS4228PBF

IRFS4228PBF

MOSFET N-CH 150V 83A D2PAK

Infineon Technologies
2,716 -

RFQ

IRFS4228PBF

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
NTMFSS1D3N06CL

NTMFSS1D3N06CL

60V T6 MAX DIE IN 5X6 SOURCE DOW

onsemi
2,821 -

RFQ

NTMFSS1D3N06CL

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 243A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 250µA 117 nC @ 10 V ±20V 8190 pF @ 30 V - 2.5W (Ta), 153W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMTS1D5N08H

NTMTS1D5N08H

T8-80V IN PQFN88 FOR INDU

onsemi
2,693 -

RFQ

NTMTS1D5N08H

Scheda tecnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
SPI21N50C3XKSA1

SPI21N50C3XKSA1

MOSFET N-CH 560V 21A TO262-3

Infineon Technologies
3,002 -

RFQ

SPI21N50C3XKSA1

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA5N100P-TRL

IXFA5N100P-TRL

MOSFET N-CH 1000V 5A TO263

IXYS
2,931 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2.8Ohm @ 2.5A, 10V 6V @ 250µA 33.4 nC @ 10 V ±30V 1830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2804STRL7P

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,648 -

RFQ

AUIRF2804STRL7P

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408-7TRL

AUIRFS8408-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,449 -

RFQ

AUIRFS8408-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1mOhm @ 100A, 10V 3.9V @ 250µA 315 nC @ 10 V ±20V 10250 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R125C7ATMA2

IPB65R125C7ATMA2

MOSFET N-CH 650V 18A TO263-3

Infineon Technologies
2,299 -

RFQ

IPB65R125C7ATMA2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA16N50P

IXFA16N50P

MOSFET N-CH 500V 16A TO263

IXYS
3,149 -

RFQ

IXFA16N50P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP36N30P3

IXFP36N30P3

MOSFET N-CH 300V 36A TO220AB

IXYS
2,847 -

RFQ

IXFP36N30P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 30 nC @ 10 V ±20V 2040 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6012FNX

R6012FNX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor
2,788 -

RFQ

R6012FNX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 510mOhm @ 6A, 10V 5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
SIHG120N60E-GE3

SIHG120N60E-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix
3,400 -

RFQ

SIHG120N60E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP410N4F7AG

STP410N4F7AG

MOSFET N-CHANNEL 40V 180A TO220

STMicroelectronics
2,634 -

RFQ

Tube STripFET™ F7 Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V - - - - - - 365W (Tc) - Through Hole
FDMT800152DC

FDMT800152DC

MOSFET N-CH 150V 8 DUAL COOL88

onsemi
2,970 -

RFQ

FDMT800152DC

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 13A (Ta), 72A (Tc) 6V, 10V 9mOhm @ 13A, 10V 4V @ 250µA 83 nC @ 10 V ±20V 5875 pF @ 75 V - 3.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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