Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIE822DF-T1-GE3

SIE822DF-T1-GE3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
1,678 -

RFQ

SIE822DF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 3.4mOhm @ 18.3A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4200 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK2225-E

2SK2225-E

MOSFET N-CH 1500V 2A TO3PFM

Renesas Electronics America Inc
3,457 -

RFQ

2SK2225-E

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 2A (Ta) 15V 12Ohm @ 1A, 15V - - ±20V 984.7 pF @ 30 V - 50W (Tc) 150°C (TJ) Through Hole
NVMFS5C404NLWFAFT3G

NVMFS5C404NLWFAFT3G

MOSFET N-CH 40V 370A 5DFN

onsemi
3,832 -

RFQ

NVMFS5C404NLWFAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.67mOhm @ 50A, 10V 2V @ 250µA 81 nC @ 4.5 V ±20V 12168 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,789 -

RFQ

AUIRF2804S-7P

Scheda tecnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA16N50P

IXTA16N50P

MOSFET N-CH 500V 16A TO263

IXYS
2,450 -

RFQ

IXTA16N50P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R150CFDAATMA1

IPB65R150CFDAATMA1

MOSFET N-CH 650V 22.4A D2PAK

Infineon Technologies
3,884 -

RFQ

IPB65R150CFDAATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
STP35N65DM2

STP35N65DM2

MOSFET N-CH 650V 32A TO220

STMicroelectronics
2,069 -

RFQ

STP35N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 110mOhm @ 16A, 10V 5V @ 250µA 56.3 nC @ 10 V ±25V 2540 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS11N50ATRLP

IRFS11N50ATRLP

MOSFET N-CH 500V 11A TO263AB

Vishay Siliconix
340 -

RFQ

IRFS11N50ATRLP

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RD3P200SNFRATL

RD3P200SNFRATL

MOSFET N-CH 100V 20A TO252

Rohm Semiconductor
2,300 -

RFQ

RD3P200SNFRATL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 46mOhm @ 20A, 10V 2.5V @ 1mA 55 nC @ 10 V ±20V 2100 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
IPF016N10NF2SATMA1

IPF016N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
2,694 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
TQM070NB04CR RLG

TQM070NB04CR RLG

MOSFET N-CH 40V 15A/75A 8PDFNU

Taiwan Semiconductor Corporation
2,500 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 75A (Tc) 7V, 10V 7mOhm @ 15A, 10V 3.8V @ 250µA 42 nC @ 10 V ±20V 3125 pF @ 20 V - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
NVMTS1D1N04CTXG

NVMTS1D1N04CTXG

T6 40V SL AIZU SINGLE NCH PQFN 8

onsemi
3,262 -

RFQ

NVMTS1D1N04CTXG

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 48.8A (Ta), 277A (Tc) 10V 1.1mOhm @ 50A, 10V 4V @ 210µA 86 nC @ 10 V ±20V 5410 pF @ 25 V - 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK170V65Z,LQ

TK170V65Z,LQ

MOSFET N-CH 650V 18A 5DFN

Toshiba Semiconductor and Storage
2,470 -

RFQ

TK170V65Z,LQ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 170mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Surface Mount
IXTA180N10T7-TRL

IXTA180N10T7-TRL

MOSFET N-CH 100V 180A TO263-7

IXYS
2,230 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFI26N60M2

STFI26N60M2

MOSFET N-CH 600V 20A I2PAKFP

STMicroelectronics
1,494 -

RFQ

STFI26N60M2

Scheda tecnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA - ±25V - - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA05N100

IXTA05N100

MOSFET N-CH 1000V 750MA TO263

IXYS
3,361 -

RFQ

IXTA05N100

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 750mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU10NM60N

STU10NM60N

MOSFET N-CH 600V 10A IPAK

STMicroelectronics
2,990 -

RFQ

STU10NM60N

Scheda tecnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 550mOhm @ 4A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 540 pF @ 50 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA130N10T

IXFA130N10T

MOSFET N-CH 100V 130A TO263

IXYS
2,115 -

RFQ

IXFA130N10T

Scheda tecnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 1mA 104 nC @ 10 V - 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMJS2D5N06CLTWG

NVMJS2D5N06CLTWG

MOSFET N-CH 60V 31A/164A 8LFPAK

onsemi
1,841 -

RFQ

NVMJS2D5N06CLTWG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 164A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.9W (Ta), 113W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZA60R180P7XKSA1

IPZA60R180P7XKSA1

MOSFET N-CH 600V 18A TO247-4

Infineon Technologies
221 -

RFQ

IPZA60R180P7XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente