Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCMT125N65S3

FCMT125N65S3

MOSFET N-CH 650V 24A 4PQFN

onsemi
287 -

RFQ

FCMT125N65S3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 49 nC @ 10 V ±30V 1920 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFI20N65M5

STFI20N65M5

MOSFET N CH 650V 18A I2PAKFP

STMicroelectronics
1,453 -

RFQ

STFI20N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 130W (Tc) 150°C (TJ) Through Hole
BUK964R2-80E,118

BUK964R2-80E,118

MOSFET N-CH 80V 120A D2PAK

Nexperia USA Inc.
3,391 -

RFQ

BUK964R2-80E,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V 4mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFI24NM60N

STFI24NM60N

MOSFET N-CH 600V 17A I2PAKFP

STMicroelectronics
1,331 -

RFQ

STFI24NM60N

Scheda tecnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 1400 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP160N055TUK-E1-AY

NP160N055TUK-E1-AY

MOSFET N-CH 55V 160A TO263-7

Renesas Electronics America Inc
740 -

RFQ

NP160N055TUK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.1mOhm @ 80A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 11250 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) Surface Mount
STF120NF10

STF120NF10

MOSFET N-CH 100V 41A TO220FP

STMicroelectronics
711 -

RFQ

STF120NF10

Scheda tecnica

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 10.5mOhm @ 60A, 10V 4V @ 250µA 233 nC @ 10 V ±20V 5200 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA130N10T7

IXTA130N10T7

MOSFET N-CH 100V 130A TO263

IXYS
2,648 -

RFQ

IXTA130N10T7

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±20V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA12N50P

IXFA12N50P

MOSFET N-CH 500V 12A TO263

IXYS
3,177 -

RFQ

IXFA12N50P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 1mA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF4905S

AUIRF4905S

MOSFET P-CH 55V 42A D2PAK

Infineon Technologies
3,090 -

RFQ

AUIRF4905S

Scheda tecnica

Bulk,Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB019N08N5ATMA1

IPB019N08N5ATMA1

DIFFERENTIATED MOSFETS

Infineon Technologies
3,509 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STF35N65DM2

STF35N65DM2

MOSFET N-CH 650V 32A TO220FP

STMicroelectronics
2,275 -

RFQ

STF35N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 110mOhm @ 16A, 10V 5V @ 250µA 56.3 nC @ 10 V ±25V 2540 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5H400NLT3G

NTMFS5H400NLT3G

MOSFET N-CH 40V 46A/330A 5DFN

onsemi
2,849 -

RFQ

NTMFS5H400NLT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 330A (Tc) 4.5V, 10V - 2V @ 250µA 11 nC @ 4.5 V ±20V 7700 pF @ 20 V - 3.3W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N110-TRL

IXTA3N110-TRL

MOSFET N-CH 1100V 3A TO263

IXYS
3,418 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1100 V 3A (Tc) 10V 4Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R5009FNX

R5009FNX

MOSFET N-CH 500V 9A TO220FM

Rohm Semiconductor
134 -

RFQ

R5009FNX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 840mOhm @ 4.5A, 10V 4V @ 1mA 18 nC @ 10 V ±30V 630 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
NTMFS5C430NT1G

NTMFS5C430NT1G

MOSFET N-CH 40V 35A/185A 5DFN

onsemi
1,000 -

RFQ

NTMFS5C430NT1G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R1-40BS,118

PSMN1R1-40BS,118

MOSFET N-CH 40V 120A D2PAK

Nexperia USA Inc.
2,207 -

RFQ

PSMN1R1-40BS,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.3mOhm @ 25A, 10V 4V @ 1mA 136 nC @ 10 V ±20V 9710 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP110N055PUK-E1-AY

NP110N055PUK-E1-AY

MOSFET N-CH 55V 110A TO263

Renesas Electronics America Inc
428 -

RFQ

NP110N055PUK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 1.75mOhm @ 55A, 10V 4V @ 250µA 294 nC @ 10 V ±20V 16050 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) Surface Mount
TK31V60W5,LVQ

TK31V60W5,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage
1,660 -

RFQ

TK31V60W5,LVQ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 109mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TA) Surface Mount
RD3P08BBDTL

RD3P08BBDTL

MOSFET N-CH 100V 80A TO252

Rohm Semiconductor
3,693 -

RFQ

RD3P08BBDTL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Ta) 6V, 10V 11.6mOhm @ 80A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 1940 pF @ 50 V - 119W (Ta) 150°C (TJ) Surface Mount
STP52N25M5

STP52N25M5

MOSFET N-CH 250V 28A TO220

STMicroelectronics
551 -

RFQ

STP52N25M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 250 V 28A (Tc) 10V 65mOhm @ 14A, 10V 5V @ 100µA 47 nC @ 10 V ±25V 1770 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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