Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AON6590_001

AON6590_001

MOSFET N-CH 40V 67A/100A 8DFN

Alpha & Omega Semiconductor Inc.
3,937 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 67A (Ta), 100A (Tc) 4.5V, 10V 0.99mOhm @ 20A, 10V 2.3V @ 250µA 100 nC @ 10 V ±20V 8320 pF @ 20 V - 7.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AONS66400

AONS66400

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.
2,881 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AONS66450

AONS66450

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.
2,596 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
IRFC3205B

IRFC3205B

MOSFET 55V 110A DIE

Infineon Technologies
2,337 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 110A - 8mOhm @ 110A, 10V - - - - - - - Surface Mount
IRLC034NB

IRLC034NB

MOSFET 55V 28A DIE

Infineon Technologies
3,898 -

RFQ

Bulk - Obsolete - MOSFET (Metal Oxide) 55 V 28A 10V 40mOhm @ 28A, 10V - - - - - - - Surface Mount
IRLC014NB

IRLC014NB

MOSFET 55V 2.8A DIE

Infineon Technologies
2,477 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 2.8A 10V 140mOhm @ 2.8A, 10V - - - - - - - Surface Mount
IRFC3415B

IRFC3415B

MOSFET 150V 43A DIE

Infineon Technologies
2,692 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 150 V 43A 10V 42mOhm @ 43A, 10V - - - - - - - Surface Mount
IRF6217TRPBF-1

IRF6217TRPBF-1

MOSFET P-CH 150V 700MA 8SO

Infineon Technologies
2,029 -

RFQ

IRF6217TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 700mA (Ta) 10V 2.4Ohm @ 420mA, 10V 5V @ 250µA 9 nC @ 10 V ±20V 150 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC9130NB

IRFC9130NB

MOSFET 100V 14A DIE

Infineon Technologies
2,068 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 100 V 14A 10V 200mOhm @ 14A, 10V - - - - - - - Surface Mount
IRFC7416B

IRFC7416B

MOSFET 30V 10A DIE

Infineon Technologies
2,255 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 30 V 10A 10V 20mOhm @ 10A, 10V - - - - - - - Surface Mount
IRLC024NB

IRLC024NB

MOSFET 55V 17A DIE

Infineon Technologies
3,070 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 17A 10V 65mOhm @ 17A, 10V - - - - - - - Surface Mount
IAUT300N08S5N011ATMA1

IAUT300N08S5N011ATMA1

MOSFET_(75V 120V( PG-HSOF-8

Infineon Technologies
2,753 -

RFQ

IAUT300N08S5N011ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 410A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP2D9N12C

FDP2D9N12C

PTNG 120V N-FET TO220

onsemi
3,809 -

RFQ

FDP2D9N12C

Scheda tecnica

Tube PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 120 V 18A (Ta), 210A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 4V @ 686µA 109 nC @ 10 V ±20V 8894 pF @ 60 V - 2.4W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
STI33N65M2

STI33N65M2

MOSFET N-CH 650V 24A I2PAK

STMicroelectronics
2,788 -

RFQ

STI33N65M2

Scheda tecnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
AUIRF3805STRL

AUIRF3805STRL

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,512 -

RFQ

AUIRF3805STRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) - 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V - 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805S-7TRL

AUIRF3805S-7TRL

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,195 -

RFQ

AUIRF3805S-7TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS138

BSS138

MOSFET N-CH 50V 220MA DIE

MICROSS/On Semiconductor
3,441 -

RFQ

Tray - Active N-Channel MOSFET (Metal Oxide) 50 V 220mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 1mA 2.4 nC @ 10 V ±20V 27 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84

BSS84

MOSFET P-CH 50V 130MA DIE

MICROSS/On Semiconductor
2,619 -

RFQ

Tray - Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA 1.3 nC @ 5 V ±20V 73 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQ7N10

FQ7N10

DIE MOSFET N-CH 100V

MICROSS/On Semiconductor
2,773 -

RFQ

Tray * Active - - - - - - - - - - - - - -
NTMFS5C410NLT3G

NTMFS5C410NLT3G

MOSFET N-CH 40V 46A/302A 5DFN

onsemi
2,007 -

RFQ

NTMFS5C410NLT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 302A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2V @ 250µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.2W (Ta), 139W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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