Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI120N04S302AKSA1

IPI120N04S302AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies
50,937 -

RFQ

IPI120N04S302AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120N04S302AKSA1

IPP120N04S302AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies
3,718 -

RFQ

IPP120N04S302AKSA1

Scheda tecnica

Tube,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R199CPFKSA1

IPW60R199CPFKSA1

MOSFET N-CH 600V 16A TO247-3

Infineon Technologies
2,569 -

RFQ

IPW60R199CPFKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH26N60EF-T1-GE3

SIHH26N60EF-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix
3,689 -

RFQ

SIHH26N60EF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 141mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2744 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS5H600NLT3G

NTMFS5H600NLT3G

MOSFET N-CH 60V 35A/250A 5DFN

onsemi
2,739 -

RFQ

NTMFS5H600NLT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 250A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 250µA 89 nC @ 10 V ±20V 6680 pF @ 30 V - 3.3W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVHL110N65S3HF

NVHL110N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 110MO

onsemi
2,627 -

RFQ

NVHL110N65S3HF

Scheda tecnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 58 nC @ 10 V ±30V 2753 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF36N60M6

STF36N60M6

MOSFET N-CH 600V 30A TO220FP

STMicroelectronics
2,916 -

RFQ

STF36N60M6

Scheda tecnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS8409TRL

AUIRFS8409TRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,703 -

RFQ

AUIRFS8409TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA230N075T2-TRL

IXTA230N075T2-TRL

MOSFET N-CH 75V 230A TO263

IXYS
2,765 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA120P065T-TRL

IXTA120P065T-TRL

MOSFET P-CH 65V 120A TO263

IXYS
3,715 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 60A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH100N60E-T1-GE3

SIHH100N60E-T1-GE3

MOSFET N-CH 600V 28A PPAK 8 X 8

Vishay Siliconix
2,283 -

RFQ

SIHH100N60E-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 100mOhm @ 13.5A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1850 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA20N65X2

IXTA20N65X2

MOSFET N-CH 650V 20A TO263

IXYS
2,268 -

RFQ

IXTA20N65X2

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFQ8N85X

IXFQ8N85X

MOSFET N-CH 850V 8A TO3P

IXYS
2,490 -

RFQ

IXFQ8N85X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA2R4N120P-TRL

IXTA2R4N120P-TRL

MOSFET N-CH 1200V 2.4A TO263

IXYS
3,649 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 1.2A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCH35N60

FCH35N60

MOSFET N-CH 600V 35A TO247-3

onsemi
2,772 -

RFQ

FCH35N60

Scheda tecnica

Tube SuperMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVB095N65S3F

NVB095N65S3F

SF3 FRFET AUTO 95MOHM D2PAK-3

onsemi
2,912 -

RFQ

NVB095N65S3F

Scheda tecnica

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3020 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6015FNX

R6015FNX

MOSFET N-CH 600V 15A TO-220FM

Rohm Semiconductor
698 -

RFQ

R6015FNX

Scheda tecnica

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 350mOhm @ 7.5A, 10V 5V @ 1mA 42 nC @ 10 V ±30V 1660 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IXTH3N100P

IXTH3N100P

MOSFET N-CH 1000V 3A TO247

IXYS
2,245 -

RFQ

IXTH3N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA34N65X2-TRL

IXFA34N65X2-TRL

MOSFET N-CH 650V 34A TO263

IXYS
2,491 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5V @ 2.5mA 56 nC @ 10 V ±30V 3230 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT9M100B

APT9M100B

MOSFET N-CH 1000V 9A TO247

Microchip Technology
3,719 -

RFQ

APT9M100B

Scheda tecnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.4Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2605 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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