Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA3N120-TRL

IXFA3N120-TRL

MOSFET N-CH 1200V 3A TO263

IXYS
3,623 -

RFQ

IXFA3N120-TRL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6035KNZC17

R6035KNZC17

MOSFET N-CH 600V 35A TO3PF

Rohm Semiconductor
2,031 -

RFQ

R6035KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 5V @ 1mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 102W (Tc) 150°C (TJ) Through Hole
R6035ENZC17

R6035ENZC17

MOSFET N-CH 600V 35A TO3PF

Rohm Semiconductor
3,288 -

RFQ

R6035ENZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 4V @ 1mA 110 nC @ 10 V ±20V 2720 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
NVH050N65S3F

NVH050N65S3F

SF3 FRFET AUTO 50MOHM TO-247

onsemi
2,346 -

RFQ

NVH050N65S3F

Scheda tecnica

Tray SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT52N30P

IXTT52N30P

MOSFET N-CH 300V 52A TO268

IXYS
3,866 -

RFQ

IXTT52N30P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA20N65X-TRL

IXTA20N65X-TRL

MOSFET N-CH 650V 20A TO263

IXYS
2,292 -

RFQ

Tape & Reel (TR) Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N400CF C0G

TSM80N400CF C0G

MOSFET N-CH 800V 12A ITO220S

Taiwan Semiconductor Corporation
3,861 -

RFQ

TSM80N400CF C0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 400mOhm @ 2.7A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1848 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTBG020N090SC1

NTBG020N090SC1

SICFET N-CH 900V 9.8A/112A D2PAK

onsemi
345 -

RFQ

NTBG020N090SC1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 900 V 9.8A (Ta), 112A (Tc) 15V 28mOhm @ 60A, 15V 4.3V @ 20mA 200 nC @ 15 V +19V, -10V 4415 pF @ 450 V - 3.7W (Ta), 477W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFX32N100Q3

IXFX32N100Q3

MOSFET N-CH 1000V 32A PLUS247-3

IXYS
250 -

RFQ

IXFX32N100Q3

Scheda tecnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3040KW7TL

SCT3040KW7TL

SICFET N-CH 1200V 56A TO263-7

Rohm Semiconductor
738 -

RFQ

SCT3040KW7TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 267W 175°C (TJ) Surface Mount
SCT3030AW7TL

SCT3030AW7TL

SICFET N-CH 650V 70A TO263-7

Rohm Semiconductor
442 -

RFQ

SCT3030AW7TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) - 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 267W 175°C (TJ) Surface Mount
SCT50N120

SCT50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics
509 -

RFQ

SCT50N120

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXTH2N300P3HV

IXTH2N300P3HV

MOSFET N-CH 3000V 2A TO247HV

IXYS
291 -

RFQ

IXTH2N300P3HV

Scheda tecnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 2A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC7014UBC

EPC7014UBC

GAN FET HEMT 60V 1A COTS 4UB

EPC Space, LLC
3,816 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 60 V 1A (Tc) 5V 580mOhm @ 1A, 5V 2.5V @ 140µA - +7V, -4V 22 pF @ 30 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N08AC

FBG04N08AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

EPC Space, LLC
121 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 40 V 8A (Tc) 5V 24mOhm @ 8A, 5V 2.5V @ 2mA 2.8 nC @ 5 V +6V, -4V 312 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N30BC

FBG04N30BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC
3,478 -

RFQ

FBG04N30BC

Scheda tecnica

Tray FSMD-B Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG30N04CC

FBG30N04CC

GAN FET HEMT 300V4A COTS 4FSMD-C

EPC Space, LLC
3,246 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) Surface Mount
2301

2301

P20V,RD(MAX)<[email protected],RD(MAX)<8

Goford Semiconductor
8,624 -

RFQ

2301

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 56mOhm @ 1.7A, 4.5V 900mV @ 250µA 12 nC @ 2.5 V ±10V 405 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
3401

3401

MOSFET P-CH 30V 4.2A SOT-23

Goford Semiconductor
10,885 -

RFQ

3401

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 55mOhm @ 4.2A, 10V 1.3V @ 250µA 9.5 nC @ 4.5 V ±12V 950 pF @ 15 V Standard 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G3035

G3035

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Goford Semiconductor
2,134 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Tc) 4.5V, 10V 59mOhm @ 4A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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