Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G3404B

G3404B

N30V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor
2,347 -

RFQ

G3404B

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 22mOhm @ 4.2A, 10V 2V @ 250µA 12.2 nC @ 10 V ±20V 526 pF @ 15 V - 1.2W -55°C ~ 150°C (TJ) Surface Mount
PMZ290UNEYL

PMZ290UNEYL

NEXPERIA PMZ290U - 20V, N-CHANNE

NXP Semiconductors
78,532 -

RFQ

PMZ290UNEYL

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX7002BK215

NX7002BK215

NEXPERIA NX7002BK - SMALL SIGNAL

Nexperia USA Inc.
39,000 -

RFQ

NX7002BK215

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
1002

1002

N100V,RD(MAX)<250M@10V,RD(MAX)<2

Goford Semiconductor
3,000 -

RFQ

1002

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A - 250mOhm @ 2A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 387 pF @ 10 V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
G6N02L

G6N02L

MOSFET N-CH 20V 6A SOT-23-3L

Goford Semiconductor
3,410 -

RFQ

G6N02L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 11.3mOhm @ 3A, 4.5V 0.9V @ 250µA 12.5 nC @ 10 V ±12V 1140 pF @ 10 V Standard 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
3400L

3400L

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor
3,000 -

RFQ

3400L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 59mOhm @ 2.8A, 2.5V 1.4V @ 250µA 9.5 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
NX3008PBKMB,315

NX3008PBKMB,315

NEXPERIA NX3008PBKMB - SMALL SIG

Nexperia USA Inc.
30,000 -

RFQ

NX3008PBKMB,315

Scheda tecnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 300mA (Ta) - 4.1Ohm @ 200mA, 4.5V 1.1V @ 250µA 0.72 nC @ 4.5 V ±8V 46 pF @ 15 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G1002L

G1002L

N100V,RD(MAX)<250M@10V,VTH1.2V~2

Goford Semiconductor
3,000 -

RFQ

G1002L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A - 250mOhm @ 2A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 413 pF @ 50 V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
06N06L

06N06L

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

Goford Semiconductor
5,520 -

RFQ

06N06L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A - 42mOhm @ 3A, 10V 2.5V @ 250µA 2.4 nC @ 10 V ±20V 765 pF @ 30 V - 960mW -55°C ~ 150°C (TJ) Surface Mount
PMZB1200UPEYL

PMZB1200UPEYL

NEXPERIA PMZB1200U - 30V, P-CHAN

NXP Semiconductors
604,195 -

RFQ

PMZB1200UPEYL

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 410mA (Ta) 1.5V, 4.5V 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2 nC @ 4.5 V ±8V 43.2 pF @ 15 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZ950UPEYL

PMZ950UPEYL

NEXPERIA PMZ950UPE - 20V, P-CHAN

NXP Semiconductors
367,883 -

RFQ

PMZ950UPEYL

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SMBTA06E6327HTSA1

SMBTA06E6327HTSA1

AF TRANSISTORS

Infineon Technologies
180,000 -

RFQ

SMBTA06E6327HTSA1

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
2N7002K

2N7002K

MOSFET SOT-23 N Channel 60V

MDD
792,000 -

RFQ

2N7002K

Scheda tecnica

Tape & Reel (TR) SOT-23 Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 4.5V, 10V 900mOhm @ 300mA, 10V 2.5V @ 250µA 0.31 nC @ 10 V ±20V 23.8 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C Surface Mount
PMG85XP,115

PMG85XP,115

NOW NEXPERIA PMG85XP - SMALL SIG

NXP USA Inc.
2,204,534 -

RFQ

PMG85XP,115

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Tj) 2.5V, 4.5V 115mOhm @ 2A, 4.5V 1.15V @ 250µA 7.2 nC @ 4.5 V ±12V 560 pF @ 10 V - 375mW (Ta), 2.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB20LNAX

PMPB20LNAX

PMPB20LNA - 40V, N-CHANNEL TRENC

Nexperia USA Inc.
66,000 -

RFQ

PMPB20LNAX

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
PMZB950UPEL315

PMZB950UPEL315

NEXPERIA PMZB950UPEL - 20 V, P-C

NXP Semiconductors
54,000 -

RFQ

PMZB950UPEL315

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
PMPB20SNAX

PMPB20SNAX

PMPB20SNA - 40V, N-CHANNEL TRENC

Nexperia USA Inc.
33,000 -

RFQ

PMPB20SNAX

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
G01N20LE

G01N20LE

N200V,RD(MAX)<850M@10V,RD(MAX)<9

Goford Semiconductor
8,720 -

RFQ

G01N20LE

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Tc) 4.5V, 10V 850mOhm @ 1.7A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 580 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G20N03D2

G20N03D2

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

Goford Semiconductor
3,000 -

RFQ

G20N03D2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 24mOhm @ 5A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 873 pF @ 30 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G1003A

G1003A

N100V,RD(MAX)<210M@10V,RD(MAX)<2

Goford Semiconductor
3,937 -

RFQ

G1003A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 210mOhm @ 3A, 10V 3V @ 250µA 18.2 nC @ 10 V ±20V 622 pF @ 25 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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