Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVD4808NT4G

NVD4808NT4G

NVD4808 - POWER MOSFET 30V 63A 8

onsemi
31,997 -

RFQ

NVD4808NT4G

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS0348

FDMS0348

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
63,000 -

RFQ

FDMS0348

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 35A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1590 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
N0300N-T1B-AT

N0300N-T1B-AT

MOSFET N-CH 30V 4.5A SC96-3

Renesas Electronics America Inc
12,000 -

RFQ

N0300N-T1B-AT

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4.5V, 10V 50mOhm @ 2A, 10V - - ±20V 350 pF @ 10 V - 1.25W (Ta) 150°C Surface Mount
FDS8878

FDS8878

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
622,342 -

RFQ

FDS8878

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta) 4.5V, 10V 14mOhm @ 10.2A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 897 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPS70R2K0CEE8211AKMA1

IPS70R2K0CEE8211AKMA1

IPS70R2K0CE - 700V COOLMOS N-CHA

Infineon Technologies
40,500 -

RFQ

IPS70R2K0CEE8211AKMA1

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
PJA3433-AU_R1_000A1

PJA3433-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.
2,811 -

RFQ

PJA3433-AU_R1_000A1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 1.8V, 4.5V 370mOhm @ 1.1A, 4.5V 1.3V @ 250µA 1.6 nC @ 4.5 V ±8V 125 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK6209-30C,118

BUK6209-30C,118

NEXPERIA BUK6209-30C - 50A, 30V

Nexperia USA Inc.
15,000 -

RFQ

BUK6209-30C,118

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 9.8mOhm @ 12A, 10V 2.8V @ 1mA 30.5 nC @ 10 V ±16V 1760 pF @ 25 V - 80W (Ta) -55°C ~ 175°C (TJ)
FDZ193P

FDZ193P

MOSFET P-CH 20V 3A 6WLCSP

Fairchild Semiconductor
780,536 -

RFQ

FDZ193P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.7V, 4.5V 90mOhm @ 1A, 4.5V 1.5V @ 250µA 10 nC @ 10 V ±12V 660 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PHK04P02T,518

PHK04P02T,518

TRANSISTORS>100MHZ

Nexperia USA Inc.
174,713 -

RFQ

PHK04P02T,518

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 16 V 4.66A (Tc) 2.5V, 10V 120mOhm @ 1A, 4.5V 600mV @ 1mA (Typ) 7.2 nC @ 4.5 V ±8V 528 pF @ 12.8 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK6213-30C,118

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V

Nexperia USA Inc.
152,500 -

RFQ

BUK6213-30C,118

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 10V 14mOhm @ 10A, 10V 2.8V @ 1mA 19.5 nC @ 10 V ±16V 1108 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ)
BUK6213-30C,118

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V

NXP Semiconductors
14,600 -

RFQ

BUK6213-30C,118

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 10V 14mOhm @ 10A, 10V 2.8V @ 1mA 19.5 nC @ 10 V ±16V 1108 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ)
BUK9245-55A/C1118

BUK9245-55A/C1118

NEXPERIA BUK9245-55A - POWER FIE

Nexperia USA Inc.
12,500 -

RFQ

BUK9245-55A/C1118

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
APT17F80B

APT17F80B

MOSFET N-CH 800V 18A TO247

Microchip Technology
2,521 -

RFQ

APT17F80B

Scheda tecnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 18A (Tc) 10V 580mOhm @ 9A, 10V 5V @ 1mA 122 nC @ 10 V ±30V 3757 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6025JNZC8

R6025JNZC8

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor
2,837 -

RFQ

R6025JNZC8

Scheda tecnica

Bag - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R070P6FKSA1

IPZ60R070P6FKSA1

MOSFET N-CH 600V 53.5A TO247-4

Infineon Technologies
2,380 -

RFQ

IPZ60R070P6FKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ P6 Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53.5A (Tc) 10V 70mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100 nC @ 10 V ±20V 4750 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH2R4N120P

IXTH2R4N120P

MOSFET N-CH 1200V 2.4A TO247

IXYS
2,339 -

RFQ

IXTH2R4N120P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 250µA 37 nC @ 10 V ±20V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31J60W5,S1VQ

TK31J60W5,S1VQ

MOSFET N-CH 600V 30.8A TO3P

Toshiba Semiconductor and Storage
2,553 -

RFQ

TK31J60W5,S1VQ

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
STF34NM60ND

STF34NM60ND

MOSFET N-CH 600V 29A TO220FP

STMicroelectronics
3,746 -

RFQ

STF34NM60ND

Scheda tecnica

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 40W (Tc) 150°C (TJ) Through Hole
IXTQ120N15P

IXTQ120N15P

MOSFET N-CH 150V 120A TO3P

IXYS
3,075 -

RFQ

IXTQ120N15P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ140N10P

IXTQ140N10P

MOSFET N-CH 100V 140A TO3P

IXYS
2,133 -

RFQ

IXTQ140N10P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 250µA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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