Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJD2NA70_L2_00001

PJD2NA70_L2_00001

700V N-CHANNEL MOSFET

Panjit International Inc.
2,888 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 2A (Ta) 10V 6.5Ohm @ 1A, 10V 4V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD3NA50_L2_00001

PJD3NA50_L2_00001

500V N-CHANNEL MOSFET

Panjit International Inc.
2,308 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V 4V @ 250µA 6.5 nC @ 10 V ±30V 260 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002

2N7002

N-CH MOSFET 60V 0.34A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
1,290 -

RFQ

2N7002

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 1.6 nC @ 10 V ±30V 27.5 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCH3377-TL-E

MCH3377-TL-E

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
249,527 -

RFQ

MCH3377-TL-E

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) - 83mOhm @ 1.5A, 4.5V - 4.6 nC @ 4.5 V - 375 pF @ 10 V - - - Surface Mount
FDG312P

FDG312P

MOSFET P-CH 20V 1.2A SC88

Fairchild Semiconductor
195,282 -

RFQ

FDG312P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.5V, 4.5V 180mOhm @ 1.2A, 4.5V 1.5V @ 250µA 5 nC @ 4.5 V ±8V 330 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3400A

YJL3400A

N-CH MOSFET 30V 5.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
1,410 -

RFQ

YJL3400A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 2.5V, 10V 25mOhm @ 5.6A, 10V 1.5V @ 250µA 17.25 nC @ 10 V ±12V 630 pF @ 15 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2301C

YJL2301C

P-CH MOSFET 20V 3.4A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
1,248 -

RFQ

YJL2301C

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 1.8V, 4.5V 64mOhm @ 3.4A, 4.5V 1V @ 250µA 4.3 nC @ 4.5 V ±10V 478 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS356AP-NB8L005A

NDS356AP-NB8L005A

-30V P-CHANNEL LOGIC LEVEL ENHAN

Fairchild Semiconductor
105,360 -

RFQ

NDS356AP-NB8L005A

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 200mOhm @ 1.3A, 10V 2.5V @ 250µA 4.4 nC @ 5 V ±20V 280 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS356AP-NB8L005A

NDS356AP-NB8L005A

-30V P-CHANNEL LOGIC LEVEL ENHAN

onsemi
87,533 -

RFQ

NDS356AP-NB8L005A

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 200mOhm @ 1.3A, 10V 2.5V @ 250µA 4.4 nC @ 5 V ±20V 280 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMN28UN,135

PMN28UN,135

MOSFET N-CH 12V 5.7A 6TSOP

NXP USA Inc.
16,992 -

RFQ

PMN28UN,135

Scheda tecnica

Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 12 V 5.7A (Tc) 1.8V, 4.5V 34mOhm @ 2A, 4.5V 700mV @ 1mA (Typ) 10.1 nC @ 4.5 V ±8V 740 pF @ 10 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0349

FDMS0349

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
217,483 -

RFQ

FDMS0349

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 20A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1410 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G26P04K

G26P04K

P-40V,RD(MAX)<18M@-10V,RD(MAX)<2

Goford Semiconductor
5,394 -

RFQ

G26P04K

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 10A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V - - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3350-TL-H

CPH3350-TL-H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
139,696 -

RFQ

CPH3350-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) - 83mOhm @ 1.5A, 4.5V - 4.6 nC @ 4.5 V - 375 pF @ 10 V - - - Surface Mount
FDMS0346

FDMS0346

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
108,000 -

RFQ

FDMS0346

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3486-TD-E

2SK3486-TD-E

2SK3486 - N-CHANNEL SILICON MOSF

Sanyo
80,723 -

RFQ

2SK3486-TD-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
GT110N06S

GT110N06S

N60V,RD(MAX)<[email protected],RD(MAX)<1

Goford Semiconductor
6,727 -

RFQ

GT110N06S

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V 2.4V @ 250µA 24 nC @ 10 V ±20V 1300 pF @ 25 V - 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMFTN6001

MMFTN6001

MOSFET, SOT-23, 60V, 0.440A, N

Diotec Semiconductor
63,000 -

RFQ

MMFTN6001

Scheda tecnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 440mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2V @ 250µA - ±20V 23.3 pF @ 25 V - 530mW (Ta) -55°C ~ 150°C (TJ)
FDG311N

FDG311N

MOSFET N-CH 20V 1.9A SC88

Fairchild Semiconductor
100,055 -

RFQ

FDG311N

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 1.9A (Ta) 2.5V, 4.5V 115mOhm @ 1.9A, 4.5V 1.5V @ 250µA 4.5 nC @ 4.5 V ±8V 270 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQN1N60CTA

FQN1N60CTA

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
90,000 -

RFQ

FQN1N60CTA

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 300mA (Tc) 10V 11.5Ohm @ 150mA, 10V 4V @ 250µA 6.2 nC @ 10 V ±30V 170 pF @ 25 V - 1W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP100,135

BSP100,135

NEXPERIA BSP100 - 3.5A, 30V, 0.1

NXP Semiconductors
38,330 -

RFQ

BSP100,135

Scheda tecnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 100mOhm @ 2.2A, 10V 2.8V @ 1mA 6 nC @ 10 V ±20V 250 pF @ 20 V - 8.3W (Tc) -65°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente