Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMPB48EPAX

PMPB48EPAX

PMPB48EPA - 30 V, P-CHANNEL TREN

Nexperia USA Inc.
12,000 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 50mOhm @ 4.7A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 860 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G16P03D3

G16P03D3

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor
9,666 -

RFQ

G16P03D3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1995 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G50N03D5

G50N03D5

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

Goford Semiconductor
5,000 -

RFQ

G50N03D5

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.4V @ 250µA 38.4 nC @ 10 V ±20V 1784 pF @ 15 V - 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G16P03S

G16P03S

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor
8,000 -

RFQ

G16P03S

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 16A - 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 3W -55°C ~ 150°C (TJ) Surface Mount
5N20A

5N20A

N200V,RD(MAX)<650M@10V,VTH1V~3V

Goford Semiconductor
4,977 -

RFQ

5N20A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5A - 650mOhm @ 2.5A, 10V 3V @ 250µA 10.8 nC @ 10 V ±20V 255 pF @ 25 V - 78W -55°C ~ 150°C (TJ)
GT060N04D3

GT060N04D3

N40V,RD(MAX)<6.5M@10V,RD(MAX)<10

Goford Semiconductor
9,978 -

RFQ

GT060N04D3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1282 pF @ 20 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G30N04D3

G30N04D3

MOSFET N-CH 40V 30A DFN33-8L

Goford Semiconductor
10,000 -

RFQ

G30N04D3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1780 pF @ 20 V Standard 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMFTN3402

MMFTN3402

MOSFET, SOT-23, 30V, 4A, N, 1W

Diotec Semiconductor
2,510 -

RFQ

MMFTN3402

Scheda tecnica

Strip - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 55mOhm @ 4A, 10V 1.4V @ 250µA - ±20V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC608PZ-F171

FDC608PZ-F171

-20V P-CHANNEL 2.5V POWERTRENCH

onsemi
345,222 -

RFQ

Tape & Reel (TR) - Last Time Buy P-Channel MOSFET (Metal Oxide) 20 V 5.8A (Ta) 2.5V, 4.5V 30mOhm @ 5.8A, 4.5V 1.5V @ 250µA 23 nC @ 4.5 V ±12V 1330 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCH6331-TL-H

MCH6331-TL-H

POWER FIELD-EFFECT TRANSISTOR

onsemi
1,119,011 -

RFQ

MCH6331-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4V, 10V 98mOhm @ 1.5A, 10V - 5 nC @ 10 V ±20V 250 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
MCH6337-TL-E

MCH6337-TL-E

POWER FIELD-EFFECT TRANSISTOR, P

onsemi
259,304 -

RFQ

MCH6337-TL-E

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 49mOhm @ 3A, 4.5V 1.3V @ 1mA 7.3 nC @ 4.5 V ±10V 670 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
PMCM6501UNE023

PMCM6501UNE023

NEXPERIA PMCM6501UNE - 20V, N-CH

NXP Semiconductors
90,000 -

RFQ

PMCM6501UNE023

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
2SK1581-T1B-A

2SK1581-T1B-A

2SK1581-T1B-A - SWITCHING N-CHAN

Renesas
30,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 16 V 200mA (Ta) 2.5V, 4V 5Ohm @ 1mA, 4V 1.6V @ 10µA - ±16V 27 pF @ 3 V - 200mW (Ta) 150°C Surface Mount
MCH6337-TL-E

MCH6337-TL-E

POWER FIELD-EFFECT TRANSISTOR, P

Sanyo
24,000 -

RFQ

MCH6337-TL-E

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 49mOhm @ 3A, 4.5V 1.3V @ 1mA 7.3 nC @ 4.5 V ±10V 670 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
BSS84

BSS84

P-CH MOSFET 60V 0.17A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,760 -

RFQ

BSS84

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 150mA, 10V 2V @ 250µA 1.77 nC @ 10 V ±20V 43 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3416A

YJL3416A

N-CH MOSFET 20V 7A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,581 -

RFQ

YJL3416A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 1.8V, 4.5V 18mOhm @ 7A, 4.5V 1V @ 250µA 11 nC @ 4.5 V ±12V 890 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2305B

YJL2305B

P-CH MOSFET 20V 5.4A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
1,872 -

RFQ

YJL2305B

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 1.8V, 4.5V 42mOhm @ 5.4A, 4.5V 1V @ 250µA 7.2 nC @ 4.5 V ±10V 850 pF @ 10 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STB32N65M5

STB32N65M5

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics
3,678 -

RFQ

STB32N65M5

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Surface Mount
R5016FNX

R5016FNX

MOSFET N-CH 500V 16A TO220FM

Rohm Semiconductor
2,423 -

RFQ

R5016FNX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Ta) 10V 325mOhm @ 8A, 10V 5V @ 1mA 46 nC @ 10 V ±30V 1700 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IXTT110N10P

IXTT110N10P

MOSFET N-CH 100V 110A TO268

IXYS
2,156 -

RFQ

IXTT110N10P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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