Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6020JNZC8

R6020JNZC8

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor
2,598 -

RFQ

R6020JNZC8

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF6NA40_T0_00001

PJF6NA40_T0_00001

400V N-CHANNEL MOSFET

Panjit International Inc.
3,440 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Ta) 10V 950mOhm @ 3A, 10V 4V @ 250µA 11.4 nC @ 10 V ±30V 553 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH16N50P3

IXFH16N50P3

MOSFET N-CH 500V 16A TO247AD

IXYS
3,334 -

RFQ

IXFH16N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF8NA50_T0_00001

PJF8NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.
2,855 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 900mOhm @ 4A, 10V 4V @ 250µA 16.2 nC @ 10 V ±30V 826 pF @ 25 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7M120S

APT7M120S

MOSFET N-CH 1200V 8A D3PAK

Microchip Technology
2,317 -

RFQ

APT7M120S

Scheda tecnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) 10V 2.1Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJP2NA60_T0_00001

PJP2NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.
3,957 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 5.7 nC @ 10 V ±30V 257 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR10120A

NDCTR10120A

MOSFET N-CH 1200V 10A SMD

onsemi
3,584 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
PJF12NA60_T0_00001

PJF12NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.
3,218 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 700mOhm @ 6A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 1492 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF20N95K5

STF20N95K5

MOSFET N-CH 950V 17.5A TO220FP

STMicroelectronics
2,968 -

RFQ

STF20N95K5

Scheda tecnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R060C7XKSA1

IPA60R060C7XKSA1

MOSFET N-CH 600V 16A TO220

Infineon Technologies
2,086 -

RFQ

IPA60R060C7XKSA1

Scheda tecnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT210N25NFDATMA1

IPT210N25NFDATMA1

MV POWER MOS

Infineon Technologies
3,528 -

RFQ

IPT210N25NFDATMA1

Scheda tecnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IXTT64N25P

IXTT64N25P

MOSFET N-CH 250V 64A TO268

IXYS
3,379 -

RFQ

IXTT64N25P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 105 nC @ 10 V ±20V 3450 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT74N20P

IXTT74N20P

MOSFET N-CH 200V 74A TO268

IXYS
2,314 -

RFQ

IXTT74N20P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) 10V 34mOhm @ 37A, 10V 5V @ 250µA 107 nC @ 10 V ±20V 3300 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA90N20X3

IXTA90N20X3

MOSFET N-CH 200V 90A TO263

IXYS
3,434 -

RFQ

Tube Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12mOhm @ 45A, 10V 4.5V @ 250µA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH110N15T2

IXFH110N15T2

MOSFET N-CH 150V 110A TO247AD

IXYS
2,227 -

RFQ

IXFH110N15T2

Scheda tecnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 500mA, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
PCFQ8P10W

PCFQ8P10W

MOSFET P-CH 100V DIE

MICROSS/On Semiconductor
2,832 -

RFQ

Tray - Active - - - - - - - - - - - - - Surface Mount
STF42N65M5

STF42N65M5

MOSFET N-CH 650V 33A TO220FP

STMicroelectronics
3,480 -

RFQ

STF42N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 79mOhm @ 16.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 4650 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
NP179N04TUK-E1-AY

NP179N04TUK-E1-AY

AUTOMOTIVE MOS

Renesas Electronics America Inc
2,904 -

RFQ

NP179N04TUK-E1-AY

Scheda tecnica

Strip Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.25mOhm @ 90A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13350 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C Surface Mount
R6020ANX

R6020ANX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
3,432 -

RFQ

R6020ANX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 220mOhm @ 10A, 10V 4.5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IPA65R065C7XKSA1

IPA65R065C7XKSA1

MOSFET N-CH 650V 15A TO220-FP

Infineon Technologies
2,078 -

RFQ

IPA65R065C7XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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