Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJF7NA65_T0_00001

PJF7NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.
2,220 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 1.5Ohm @ 3.5A, 10V 4V @ 250µA 16.8 nC @ 10 V ±30V 754 pF @ 25 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF7NA80_T0_00001

PJF7NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.
3,447 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7A (Ta) 10V 1.55Ohm @ 3.5A, 10V 4V @ 250µA 23 nC @ 10 V ±30V 1082 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF2NA70_T0_00001

PJF2NA70_T0_00001

700V N-CHANNEL MOSFET

Panjit International Inc.
2,575 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 2A (Ta) 10V 6.5Ohm @ 1A, 10V 4V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJF4NA65_T0_00001

PJF4NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.
2,533 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 2.7Ohm @ 2A, 10V 4V @ 250µA 11.4 nC @ 10 V ±30V 463 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJP7NA65_T0_00001

PJP7NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.
2,942 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 1.5Ohm @ 3.5A, 10V 4V @ 250µA 16.8 nC @ 10 V ±30V 754 pF @ 25 V - 145W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMPB50ENEX

PMPB50ENEX

PMPB50ENE - 30 V, N-CHANNEL TREN

Nexperia USA Inc.
12,000 -

RFQ

PMPB50ENEX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta) 4.5V, 10V 43mOhm @ 5.1A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 271 pF @ 15 V - 1.9mW (Ta) -55°C ~ 175°C (TJ) Surface Mount
PMPB23XNEAX

PMPB23XNEAX

PMPB23XNEA - 20 V, N-CHANNEL TRE

Nexperia USA Inc.
11,874 -

RFQ

PMPB23XNEAX

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 1.8V, 4.5V 22mOhm @ 7A, 4.5V 0.9V @ 250µA 17 nC @ 4.5 V ±12V 1136 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G10N10A

G10N10A

N100V,RD(MAX)130mOHM@10V,TO-252

Goford Semiconductor
4,851 -

RFQ

G10N10A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 130mOhm @ 2A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 690 pF @ 25 V - 28W (Ta) -55°C ~ 150°C (TJ) Surface Mount
CPH6355-TL-H

CPH6355-TL-H

POWER FIELD-EFFECT TRANSISTOR, P

onsemi
226,984 -

RFQ

CPH6355-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4V, 10V 169mOhm @ 1.5A, 10V - 3.9 nC @ 10 V ±20V 172 pF @ 10 V - 1.6W (Ta) 150°C (TJ) Surface Mount
PJC7002H_R1_00001

PJC7002H_R1_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,640 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 5V, 10V 5Ohm @ 300mA, 10V 3V @ 250µA 1.3 nC @ 4.5 V ±20V 22 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
EFC4612R-S-TR

EFC4612R-S-TR

DUAL N-CHANNEL POWER MOSFET FOR

onsemi
360,000 -

RFQ

EFC4612R-S-TR

Scheda tecnica

Bulk - Active - - - - - - - - - - - - 150°C (TJ) Surface Mount
TF252TH-5-TL-H

TF252TH-5-TL-H

N-CHANNEL JFET

onsemi
253,576 -

RFQ

TF252TH-5-TL-H

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
G12P03D3

G12P03D3

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

Goford Semiconductor
9,060 -

RFQ

G12P03D3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 20mOhm @ 6A, 10V 2V @ 250µA 24.5 nC @ 10 V ±20V 1253 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH6355-TL-W

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

onsemi
363,684 -

RFQ

CPH6355-TL-W

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4V, 10V 169mOhm @ 1.5A, 10V 2.6V @ 1mA 3.9 nC @ 10 V ±20V 172 pF @ 10 V - 1.6W (Ta) 150°C (TJ) Surface Mount
NTNS3CS68NZT5G

NTNS3CS68NZT5G

4.3A, 20V, 0.06OHM, 2-ELEMENT, N

onsemi
280,000 -

RFQ

NTNS3CS68NZT5G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
CPH3355-TL-H

CPH3355-TL-H

CPH3355 - SINGLE P-CHANNEL POWER

onsemi
183,766 -

RFQ

CPH3355-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 4V, 10V 156mOhm @ 1A, 10V 2.6V @ 1mA 3.9 nC @ 10 V ±20V 172 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
NTNS3CS94NZT5G

NTNS3CS94NZT5G

2.8A, 20V, 0.09OHM, N-CHANNEL MO

onsemi
144,000 -

RFQ

NTNS3CS94NZT5G

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
SCH1430-TL-W

SCH1430-TL-W

SCH1430 - POWER MOSFET, 20V, 2A

onsemi
25,000 -

RFQ

SCH1430-TL-W

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 125mOhm @ 1A, 4.5V 1.3V @ 1mA 1.8 nC @ 4.5 V ±12V 128 pF @ 10 V - 800mW (Ta) 150°C (TJ)
SCH1331-TL-W

SCH1331-TL-W

POWER MOSFET

onsemi
20,000 -

RFQ

SCH1331-TL-W

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.5V, 4.5V 84mOhm @ 1.5A, 4.5V 1.3V @ 1mA 5.6 nC @ 4.5 V ±10V 405 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
SCH1331-TL-H

SCH1331-TL-H

SCH1331 - 12V, 3A, PNP POWER MOS

onsemi
19,650 -

RFQ

SCH1331-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.5V, 4.5V 84mOhm @ 1.5A, 4.5V - 5.6 nC @ 4.5 V ±10V 405 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente