Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7K134-100EX

BUK7K134-100EX

NEXPERIA BUK7K134 - DUAL N-CHANN

Nexperia USA Inc.
2,669 -

RFQ

BUK7K134-100EX

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFN8458TR

AUIRFN8458TR

AUIRFN8458 - 20V-40V N-CHANNEL A

Infineon Technologies
2,012 -

RFQ

AUIRFN8458TR

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
SPP11N65C3XKSA1

SPP11N65C3XKSA1

SPP11N65C3 - 650V-700V COOLMOS N

Infineon Technologies
2,051 -

RFQ

SPP11N65C3XKSA1

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18532NQ5B

CSD18532NQ5B

CSD18532NQ5B - 60V, N CH NEXFET

Texas Instruments
2,219 -

RFQ

CSD18532NQ5B

Scheda tecnica

Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 6V, 10V 3.4mOhm @ 25A, 10V 3.4V @ 250µA 64 nC @ 10 V ±20V 5340 pF @ 30 V - 3.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR3636

AUIRLR3636

AUIRLR3636 - 55V-60V N-CHANNEL A

Infineon Technologies
2,943 -

RFQ

AUIRLR3636

Scheda tecnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDPL100N10BG

NDPL100N10BG

MOSFET N-CH 100V 100A TO220

onsemi
2,057 -

RFQ

NDPL100N10BG

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 10V, 15V 7.2mOhm @ 50A, 15V 4V @ 1mA 35 nC @ 10 V ±20V 2950 pF @ 50 V - 2.1W (Ta), 110W (Tc) 175°C (TJ) Through Hole
AUIRF1324STRL7P

AUIRF1324STRL7P

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,457 -

RFQ

AUIRF1324STRL7P

Scheda tecnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 340A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y20-30B,115

BUK7Y20-30B,115

NEXPERIA BUK7Y20 - N-CHANNEL TRE

Nexperia USA Inc.
3,116 -

RFQ

BUK7Y20-30B,115

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39.5A (Tc) 10V 20mOhm @ 20A, 10V 4V @ 1mA 11.2 nC @ 10 V ±20V 688 pF @ 25 V - 59W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6218PBF

IRF6218PBF

IRF6218 - 20V-250V P-CHANNEL POW

Infineon Technologies
3,206 -

RFQ

IRF6218PBF

Scheda tecnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB067N08N3GATMA1

IPB067N08N3GATMA1

IPB067N08N3 G - 20V-30V N-CHANNE

Infineon Technologies
2,682 -

RFQ

IPB067N08N3GATMA1

Scheda tecnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 6.7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S4L05ATMA2

IPB80N06S4L05ATMA2

MOSFET_)40V,60V)

Infineon Technologies
3,791 -

RFQ

IPB80N06S4L05ATMA2

Scheda tecnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB61N15DPBF

IRFB61N15DPBF

IRFB61N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,910 -

RFQ

IRFB61N15DPBF

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) - 32mOhm @ 36A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3470 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5P10TM

FQD5P10TM

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
3,177 -

RFQ

FQD5P10TM

Scheda tecnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 3.6A (Tc) 10V 1.05Ohm @ 1.8A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD25DP06LMATMA1

IPD25DP06LMATMA1

IPD06P005 - TRENCH 40<-<100V

Infineon Technologies
3,156 -

RFQ

IPD25DP06LMATMA1

Scheda tecnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V 2V @ 270µA 13.8 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCP190N60E

FCP190N60E

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,246 -

RFQ

FCP190N60E

Scheda tecnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB86563-F085

FDB86563-F085

N-CHANNEL POWERTRENCH MOSFET, 60

onsemi
3,765 -

RFQ

FDB86563-F085

Scheda tecnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 250µA 163 nC @ 10 V ±20V 10100 pF @ 30 V - 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC026N03L5SATMA1

ISC026N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,087 -

RFQ

ISC026N03L5SATMA1

Scheda tecnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9M11-40HX

BUK9M11-40HX

BUK9M11-40H - N-CHANNEL 40V, LOG

Nexperia USA Inc.
3,138 -

RFQ

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta) 4.5V, 10V 11mOhm @ 10A, 10V 2.2V @ 1mA 21 nC @ 10 V +16V, -10V 1345 pF @ 25 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR48ZTRL

AUIRFR48ZTRL

AUIRFR48Z - 20V-800V AUTOMOTIVE

Infineon Technologies
3,428 -

RFQ

AUIRFR48ZTRL

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N60C3

SPP20N60C3

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,729 -

RFQ

SPP20N60C3

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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