Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS7670

FDMS7670

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
2,533 -

RFQ

FDMS7670

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 42A (Tc) 4.5V, 10V 3.8mOhm @ 21A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4105 pF @ 15 V - 2.5W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7506-55A,127

BUK7506-55A,127

NEXPERIA BUK7506-55A - POWER FIE

Nexperia USA Inc.
2,985 -

RFQ

BUK7506-55A,127

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.3mOhm @ 25A, 10V 4V @ 1mA - ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF16N60NT

FCPF16N60NT

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,322 -

RFQ

FCPF16N60NT

Scheda tecnica

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 8A, 10V 4V @ 250µA 52.3 nC @ 10 V ±30V 2170 pF @ 100 V - 35.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN8R5-100PSFQ

PSMN8R5-100PSFQ

NEXPERIA PSMN8R5 - NEXTPOWER 100

NXP Semiconductors
3,657 -

RFQ

PSMN8R5-100PSFQ

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 98A (Ta) 7V, 10V 8.7mOhm @ 25A, 10V 4V @ 1mA 44.5 nC @ 10 V ±20V 3181 pF @ 50 V - 183W (Ta) -55°C ~ 175°C (TJ) Through Hole
IPD60R380P6ATMA1

IPD60R380P6ATMA1

XPD60R380 - LOW POWER_LEGACY

Infineon Technologies
2,318 -

RFQ

IPD60R380P6ATMA1

Scheda tecnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC606P

FDC606P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,619 -

RFQ

FDC606P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 4.5V 26mOhm @ 6A, 4.5V 1.5V @ 250µA 25 nC @ 4.5 V ±8V 1699 pF @ 6 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS7430PBF

IRFS7430PBF

TRENCH <= 40V

Infineon Technologies
2,140 -

RFQ

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6623TRPBF

IRF6623TRPBF

IRF6623 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,842 -

RFQ

IRF6623TRPBF

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1360 pF @ 10 V - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
RF1S530SM9A

RF1S530SM9A

14A, 100V, 0.16OHM, N-CHANNEL PO

Harris Corporation
3,791 -

RFQ

RF1S530SM9A

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFB8407

AUIRFB8407

AUIRFB8407 - 20V-40V N-CHANNEL A

Infineon Technologies
2,428 -

RFQ

AUIRFB8407

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1405ZS-7P

AUIRF1405ZS-7P

AUIRF1405 - 55V-60V N-CHANNEL AU

International Rectifier
2,770 -

RFQ

AUIRF1405ZS-7P

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF6218S

AUIRF6218S

AUIRF6218 - 20V-150V P-CHANNEL A

International Rectifier
2,565 -

RFQ

AUIRF6218S

Scheda tecnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP12N10L

RFP12N10L

12A, 100V, 0.2OHM, N-CHANNEL, MO

Fairchild Semiconductor
2,513 -

RFQ

RFP12N10L

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
BUK9635-55A,118

BUK9635-55A,118

N-CHANNEL TRENCHMOS LOGIC LEVEL

Nexperia USA Inc.
2,870 -

RFQ

BUK9635-55A,118

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 34A (Tc) 5V, 10V 32mOhm @ 25A, 10V 2V @ 1mA - ±10V 1173 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9E08-55B,127

BUK9E08-55B,127

NEXPERIA BUK9E08-55B - 75A, 55V

NXP Semiconductors
2,813 -

RFQ

BUK9E08-55B,127

Scheda tecnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 45 nC @ 5 V ±15V 5280 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
BLA1011-10

BLA1011-10

BLA1011-10 - N-CHANNEL LDMOS AVI

Rochester Electronics, LLC
3,454 -

RFQ

BLA1011-10

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IRFB5620PBF

IRFB5620PBF

IRFB5620 - 12V-300V N-CHANNEL PO

International Rectifier
2,832 -

RFQ

IRFB5620PBF

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
MCH3382-TL-H

MCH3382-TL-H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,796 -

RFQ

MCH3382-TL-H

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) 1.8V, 4.5V 198mOhm @ 1A, 4.5V - 2.3 nC @ 4.5 V ±9V 170 pF @ 6 V - 800mW (Ta) 150°C (TJ) Surface Mount
IPW60R0706P

IPW60R0706P

600V COOLMOS N-CHANNEL POWER MOS

Infineon Technologies
2,484 -

RFQ

IPW60R0706P

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
BUK9880-55/CU135

BUK9880-55/CU135

NEXPERIA BUK9880-55 3.5A, 55V, 0

NXP Semiconductors
3,032 -

RFQ

BUK9880-55/CU135

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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