Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUFA76432S3ST

HUFA76432S3ST

MOSFET N-CH 60V 59A D2PAK

Fairchild Semiconductor
2,993 -

RFQ

HUFA76432S3ST

Scheda tecnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFS9640

SFS9640

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
1,236 -

RFQ

SFS9640

Scheda tecnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 59 nC @ 10 V ±30V 1585 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPU03N60S5IN

SPU03N60S5IN

N-CHANNEL POWER MOSFET

Infineon Technologies
1,217 -

RFQ

SPU03N60S5IN

Scheda tecnica

Bulk - Active - - - - - - - - - - - - - -
RF1K49157

RF1K49157

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
960 -

RFQ

RF1K49157

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 30mOhm @ 6.3A, 10V 3V @ 250µA 88 nC @ 20 V ±20V 1575 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RF1S45N02LSM

RF1S45N02LSM

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

RF1S45N02LSM

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A - - - - - - - - - Surface Mount
RFD16N05NL

RFD16N05NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
776 -

RFQ

RFD16N05NL

Scheda tecnica

Bulk PSPICE® Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

onsemi
657 -

RFQ

IRF530

Scheda tecnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
DIT150N03

DIT150N03

MOSFET N-CH 30V 150A TO220AB

Diotec Semiconductor
1,000 -

RFQ

DIT150N03

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 5000 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FW905-TL-E

FW905-TL-E

P-CHANNEL SILICON MOSFET

Sanyo
8,000 -

RFQ

FW905-TL-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDB8876

FDB8876

MOSFET N-CH 30V 71A TO263AB

Fairchild Semiconductor
7,486 -

RFQ

FDB8876

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP02N60S5

SPP02N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
5,264 -

RFQ

SPP02N60S5

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR120Z

AUIRFR120Z

PFET, 8.7A I(D), 100V, 0.19OHM

International Rectifier
4,974 -

RFQ

AUIRFR120Z

Scheda tecnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ)
HUF75623P3

HUF75623P3

MOSFET N-CH 100V 22A TO220-3

Fairchild Semiconductor
4,814 -

RFQ

HUF75623P3

Scheda tecnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 64mOhm @ 22A, 10V 4V @ 250µA 52 nC @ 20 V ±20V 790 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7507-55B,127

BUK7507-55B,127

PFET, 119A I(D), 55V, 0.0071OHM

NXP USA Inc.
3,998 -

RFQ

BUK7507-55B,127

Scheda tecnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 3760 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
2SK1274-AZ

2SK1274-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,710 -

RFQ

2SK1274-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
RF1S45N02LSM9A

RF1S45N02LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,400 -

RFQ

RF1S45N02LSM9A

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
FDD6N20TF

FDD6N20TF

MOSFET N-CH 200V 4.5A DPAK

Fairchild Semiconductor
1,929 -

RFQ

FDD6N20TF

Scheda tecnica

Bulk UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) 10V 800mOhm @ 2.3A, 10V 5V @ 250µA 6.1 nC @ 10 V ±30V 230 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD220

IRFD220

0.8A 200V 0.800 OHM N-CHANNEL

Harris Corporation
913 -

RFQ

IRFD220

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 800mA (Ta) 10V 800mOhm @ 480mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RJK1028DSP-00#J5

RJK1028DSP-00#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,350 -

RFQ

RJK1028DSP-00#J5

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
HUF76437S3S

HUF76437S3S

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor
4,945 -

RFQ

HUF76437S3S

Scheda tecnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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