Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3711S

IRF3711S

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,718 -

RFQ

IRF3711S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711

IRFR3711

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
2,821 -

RFQ

IRFR3711

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709L

IRF3709L

MOSFET N-CH 30V 90A TO262

Infineon Technologies
2,949 -

RFQ

IRF3709L

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711

IRF3711

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
2,285 -

RFQ

IRF3711

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1407L

IRF1407L

MOSFET N-CH 75V 100A TO262

Infineon Technologies
2,577 -

RFQ

IRF1407L

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407S

IRF1407S

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
2,029 -

RFQ

IRF1407S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7326D2

IRF7326D2

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
2,416 -

RFQ

IRF7326D2

Scheda tecnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBA1404

IRFBA1404

MOSFET N-CH 40V 206A SUPER-220

Infineon Technologies
3,992 -

RFQ

IRFBA1404

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Ta) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) - Through Hole
IRL3716

IRL3716

MOSFET N-CH 20V 180A TO220AB

Infineon Technologies
2,711 -

RFQ

IRL3716

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3716S

IRL3716S

MOSFET N-CH 20V 180A D2PAK

Infineon Technologies
3,761 -

RFQ

IRL3716S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5802TR

IRF5802TR

MOSFET N-CH 150V 0.9A 6-TSOP

Infineon Technologies
2,070 -

RFQ

IRF5802TR

Scheda tecnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) - 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V - 88 pF @ 25 V - - - Surface Mount
IRF5806

IRF5806

MOSFET P-CH 20V 4A MICRO6

Infineon Technologies
3,065 -

RFQ

IRF5806

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 86mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4 nC @ 4.5 V ±20V 594 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3715

IRL3715

MOSFET N-CH 20V 54A TO220AB

Infineon Technologies
3,115 -

RFQ

IRL3715

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5803

IRF5803

MOSFET P-CH 40V 3.4A MICRO6

Infineon Technologies
2,380 -

RFQ

IRF5803

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5802

IRF5802

MOSFET N-CH 150V 900MA MICRO6

Infineon Technologies
2,555 -

RFQ

IRF5802

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) 10V 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V 88 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5804

IRF5804

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies
3,634 -

RFQ

IRF5804

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 680 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5800

IRF5800

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies
2,505 -

RFQ

IRF5800

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V 1V @ 250µA 17 nC @ 10 V ±20V 535 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU5410

IRFU5410

MOSFET P-CH 100V 13A IPAK

Infineon Technologies
3,623 -

RFQ

IRFU5410

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7807A

IRF7807A

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,601 -

RFQ

IRF7807A

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3714S

IRL3714S

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,877 -

RFQ

IRL3714S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 1617181920212223...420Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente