Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7477

IRF7477

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,451 -

RFQ

IRF7477

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU3709

IRFU3709

MOSFET N-CH 30V 90A IPAK

Infineon Technologies
2,398 -

RFQ

IRFU3709

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 4.5 V ±20V 2672 pF @ 16 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709S

IRF3709S

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
3,539 -

RFQ

IRF3709S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU3711

IRFU3711

MOSFET N-CH 20V 100A IPAK

Infineon Technologies
2,500 -

RFQ

IRFU3711

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711L

IRF3711L

MOSFET N-CH 20V 110A TO262

Infineon Technologies
3,885 -

RFQ

IRF3711L

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709

IRF3709

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies
3,924 -

RFQ

IRF3709

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630NL

IRF630NL

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies
3,963 -

RFQ

IRF630NL

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1704

IRF1704

MOSFET N-CH 40V 170A TO220AB

Infineon Technologies
2,343 -

RFQ

IRF1704

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6950 pF @ 25 V - 230W (Tc) -55°C ~ 200°C (TJ) Through Hole
IRF7702

IRF7702

MOSFET P-CH 12V 8A 8TSSOP

Infineon Technologies
3,575 -

RFQ

IRF7702

Scheda tecnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 14mOhm @ 8A, 4.5V 1.2V @ 250µA 81 nC @ 4.5 V ±8V 3470 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3707

IRFR3707

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
2,847 -

RFQ

IRFR3707

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3704

IRFU3704

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,511 -

RFQ

IRFU3704

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1607

IRF1607

MOSFET N-CH 75V 142A TO220AB

Infineon Technologies
3,011 -

RFQ

IRF1607

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 142A (Tc) 10V 7.5mOhm @ 85A, 10V 4V @ 250µA 320 nC @ 10 V ±20V 7750 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7451

IRF7451

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
2,524 -

RFQ

IRF7451

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR12N25D

IRFR12N25D

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,588 -

RFQ

IRFR12N25D

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU12N25D

IRFU12N25D

MOSFET N-CH 250V 14A IPAK

Infineon Technologies
2,366 -

RFQ

IRFU12N25D

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404S

IRL1404S

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
3,068 -

RFQ

IRL1404S

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704

IRFR3704

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
2,242 -

RFQ

IRFR3704

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7807VD2

IRF7807VD2

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,006 -

RFQ

IRF7807VD2

Scheda tecnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL1404L

IRL1404L

MOSFET N-CH 40V 160A TO262

Infineon Technologies
3,302 -

RFQ

IRL1404L

Scheda tecnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407STRR

IRF1407STRR

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
2,491 -

RFQ

IRF1407STRR

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Media giornaliera RFQ
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1800+ Produttori mondiali
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