Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPW11N60S5

SPW11N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
15,052 -

RFQ

SPW11N60S5

Scheda tecnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB70P04P409ATMA1

IPB70P04P409ATMA1

MOSFET N-CH 40V 72A D2PAK

Infineon Technologies
3,803 -

RFQ

IPB70P04P409ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB050N10NF2SATMA1

IPB050N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,661 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSC019N04LSTATMA1

BSC019N04LSTATMA1

DIFFERENTIATED MOSFETS

Infineon Technologies
3,590 -

RFQ

Tape & Reel (TR) - Active - - - 28A (Ta), 161A (Tc) - - - - - - - - - -
IPI80N06S407AKSA2

IPI80N06S407AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies
8,500 -

RFQ

IPI80N06S407AKSA2

Scheda tecnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50R399CPATMA1

IPD50R399CPATMA1

LOW POWER_LEGACY

Infineon Technologies
3,736 -

RFQ

IPD50R399CPATMA1

Scheda tecnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies
3,575 -

RFQ

BSC159N10LSFGATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 63A (Tc) 4.5V, 10V 15.9mOhm @ 50A, 10V 2.4V @ 72µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies
3,711 -

RFQ

IPB80P03P4L07ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRRPBF

IRF3710STRRPBF

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
2,822 -

RFQ

IRF3710STRRPBF

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA083N10NM5SXKSA1

IPA083N10NM5SXKSA1

MOSFET N-CH 100V 50A TO220

Infineon Technologies
2,064 -

RFQ

IPA083N10NM5SXKSA1

Scheda tecnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 6V, 10V 8.3mOhm @ 25A, 10V 3.8V @ 49µA 40 nC @ 10 V ±20V 2700 pF @ 50 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R420CFDATMA1

IPD65R420CFDATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies
3,807 -

RFQ

IPD65R420CFDATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R420CFDATMA2

IPD65R420CFDATMA2

MOSFET N-CH 650V 8.7A TO251-3

Infineon Technologies
2,234 -

RFQ

IPD65R420CFDATMA2

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB70P04P409ATMA2

IPB70P04P409ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
3,753 -

RFQ

IPB70P04P409ATMA2

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R380C6ATMA1

IPD65R380C6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies
2,932 -

RFQ

IPD65R380C6ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2807STRRPBF

IRF2807STRRPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
2,620 -

RFQ

IRF2807STRRPBF

Scheda tecnica

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P407ATMA1

IPB80P04P407ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,608 -

RFQ

IPB80P04P407ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L06ATMA1

IPB80P04P4L06ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,657 -

RFQ

IPB80P04P4L06ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.4mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V ±16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB70N12S311ATMA1

IPB70N12S311ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies
3,461 -

RFQ

IPB70N12S311ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk * Not For New Designs - - - - - - - - - - - - - -
IPD90N04S3H4ATMA1

IPD90N04S3H4ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,335 -

RFQ

IPD90N04S3H4ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.3mOhm @ 90A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P03P4L07ATMA2

IPB80P03P4L07ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
2,535 -

RFQ

IPB80P03P4L07ATMA2

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 338339340341342343344345...420Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente