Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK50E10K3(S1SS-Q)

TK50E10K3(S1SS-Q)

MOSFET N-CH 100V 50A TO-220AB

Toshiba Semiconductor and Storage
2,882 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - Through Hole
TK60E08K3,S1X(S

TK60E08K3,S1X(S

MOSFET N-CH 75V 60A TO220-3

Toshiba Semiconductor and Storage
2,426 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A - 9mOhm @ 30A, 10V - 75 nC @ 10 V - - - 128W - Through Hole
TK60P03M1,RQ(S

TK60P03M1,RQ(S

MOSFET N-CH 30V 60A DPAK

Toshiba Semiconductor and Storage
3,486 -

RFQ

TK60P03M1,RQ(S

Scheda tecnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 6.4mOhm @ 30A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2700 pF @ 10 V - 63W (Tc) 150°C (TJ) Surface Mount
TK65S04K3L(T6L1,NQ

TK65S04K3L(T6L1,NQ

MOSFET N-CH 40V 65A DPAK

Toshiba Semiconductor and Storage
2,152 -

RFQ

TK65S04K3L(T6L1,NQ

Scheda tecnica

Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 6V, 10V 4.5mOhm @ 32.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2800 pF @ 10 V - 88W (Tc) 175°C (TJ) Surface Mount
TK80S04K3L(T6L1,NQ

TK80S04K3L(T6L1,NQ

MOSFET N-CH 40V 80A DPAK

Toshiba Semiconductor and Storage
2,300 -

RFQ

TK80S04K3L(T6L1,NQ

Scheda tecnica

Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 3.1mOhm @ 40A, 10V 3V @ 1mA 87 nC @ 10 V ±20V 4340 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
TK80S06K3L(T6L1,NQ

TK80S06K3L(T6L1,NQ

MOSFET N-CH 60V 80A DPAK

Toshiba Semiconductor and Storage
3,044 -

RFQ

TK80S06K3L(T6L1,NQ

Scheda tecnica

Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 5.5mOhm @ 40A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 4200 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
TK8A60DA(STA4,Q,M)

TK8A60DA(STA4,Q,M)

MOSFET N-CH 600V 7.5A TO220SIS

Toshiba Semiconductor and Storage
2,321 -

RFQ

TK8A60DA(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TPC6008-H(TE85L,FM

TPC6008-H(TE85L,FM

MOSFET N-CH 30V 5.9A VS-6

Toshiba Semiconductor and Storage
2,473 -

RFQ

TPC6008-H(TE85L,FM

Scheda tecnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.3V @ 100µA 4.8 nC @ 10 V ±20V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6009-H(TE85L,FM

TPC6009-H(TE85L,FM

MOSFET N-CH 40V 5.3A VS-6

Toshiba Semiconductor and Storage
3,402 -

RFQ

TPC6009-H(TE85L,FM

Scheda tecnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 81mOhm @ 2.7A, 10V 2.3V @ 100µA 4.7 nC @ 10 V ±20V 290 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6010-H(TE85L,FM

TPC6010-H(TE85L,FM

MOSFET N-CH 60V 6.1A VS-6

Toshiba Semiconductor and Storage
3,590 -

RFQ

TPC6010-H(TE85L,FM

Scheda tecnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta) 4.5V, 10V 59mOhm @ 3.1A, 10V 2.3V @ 100µA 12 nC @ 10 V ±20V 830 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6011(TE85L,F,M)

TPC6011(TE85L,F,M)

MOSFET N-CH 30V 6A VS-6

Toshiba Semiconductor and Storage
3,745 -

RFQ

TPC6011(TE85L,F,M)

Scheda tecnica

Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 20mOhm @ 3A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 640 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6012(TE85L,F,M)

TPC6012(TE85L,F,M)

MOSFET N-CH 20V 6A VS-6

Toshiba Semiconductor and Storage
3,956 -

RFQ

TPC6012(TE85L,F,M)

Scheda tecnica

Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 20mOhm @ 3A, 4.5V 1.2V @ 200µA 9 nC @ 5 V ±12V 630 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6110(TE85L,F,M)

TPC6110(TE85L,F,M)

MOSFET P-CH 30V 4.5A VS-6

Toshiba Semiconductor and Storage
2,545 -

RFQ

TPC6110(TE85L,F,M)

Scheda tecnica

Tape & Reel (TR) U-MOSVI Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) - 56mOhm @ 2.2A, 10V 2V @ 100µA 14 nC @ 10 V - 510 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC6113(TE85L,F,M)

TPC6113(TE85L,F,M)

MOSFET P-CH 20V 5A VS-6

Toshiba Semiconductor and Storage
2,858 -

RFQ

TPC6113(TE85L,F,M)

Scheda tecnica

Tape & Reel (TR) U-MOSVI Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 4.5V 55mOhm @ 2.5A, 4.5V 1.2V @ 200µA 10 nC @ 5 V ±12V 690 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
TPC8062-H,LQ(CM

TPC8062-H,LQ(CM

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage
2,652 -

RFQ

TPC8062-H,LQ(CM

Scheda tecnica

Tape & Reel (TR) U-MOSVII-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 5.8mOhm @ 9A, 10V 2.3V @ 300µA 34 nC @ 10 V ±20V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8065-H,LQ(S

TPC8065-H,LQ(S

MOSFET N-CH 30V 13A 8SOP

Toshiba Semiconductor and Storage
2,688 -

RFQ

TPC8065-H,LQ(S

Scheda tecnica

Tape & Reel (TR) U-MOSVII-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11.6mOhm @ 6.5A, 10V 2.3V @ 200µA 20 nC @ 10 V ±20V 1350 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8066-H,LQ(S

TPC8066-H,LQ(S

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
3,485 -

RFQ

TPC8066-H,LQ(S

Scheda tecnica

Tape & Reel (TR) U-MOSVII-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 16mOhm @ 5.5A, 10V 2.3V @ 100µA 15 nC @ 10 V ±20V 1100 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8067-H,LQ(S

TPC8067-H,LQ(S

MOSFET N-CH 30V 9A 8SOP

Toshiba Semiconductor and Storage
3,359 -

RFQ

TPC8067-H,LQ(S

Scheda tecnica

Tape & Reel (TR) U-MOSVII-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 25mOhm @ 4.5A, 10V 2.3V @ 100µA 9.5 nC @ 10 V ±20V 690 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8092,LQ(S

TPC8092,LQ(S

MOSFET N-CH 30V 15A 8SOP

Toshiba Semiconductor and Storage
2,342 -

RFQ

TPC8092,LQ(S

Scheda tecnica

Tape & Reel (TR) U-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 9mOhm @ 7.5A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 1800 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPC8126,LQ(CM

TPC8126,LQ(CM

MOSFET P-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage
3,634 -

RFQ

TPC8126,LQ(CM

Scheda tecnica

Tape & Reel (TR) U-MOSVI Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 10mOhm @ 5.5A, 10V 2V @ 500µA 56 nC @ 10 V +20V, -25V 2400 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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