Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDN339AN

FDN339AN

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,011 -

RFQ

FDN339AN

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 35mOhm @ 3A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 700 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB0260N1007L

FDB0260N1007L

MOSFET N-CH 100V 200A TO263-7

Fairchild Semiconductor
2,890 -

RFQ

FDB0260N1007L

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 2.6mOhm @ 27A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8545 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQU12N20TU

FQU12N20TU

MOSFET N-CH 200V 9A I-PAK

Fairchild Semiconductor
3,817 -

RFQ

FQU12N20TU

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 280mOhm @ 4.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3680

FDD3680

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,507 -

RFQ

FDD3680

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 6V, 10V 46mOhm @ 6.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1735 pF @ 50 V - 68W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDP55N06

FDP55N06

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,663 -

RFQ

FDP55N06

Scheda tecnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 22mOhm @ 27.5A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF15N65

FDPF15N65

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,038 -

RFQ

FDPF15N65

Scheda tecnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 440mOhm @ 7.5A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 3095 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
BS170-D26Z

BS170-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,203 -

RFQ

BS170-D26Z

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) Through Hole
FCH067N65S3-F155

FCH067N65S3-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,690 -

RFQ

FCH067N65S3-F155

Scheda tecnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V Super Junction 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU2N60CTU

FQU2N60CTU

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,784 -

RFQ

FQU2N60CTU

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3670

FDD3670

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,669 -

RFQ

FDD3670

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Ta) 6V, 10V 32mOhm @ 7.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD850N10L

FDD850N10L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,996 -

RFQ

FDD850N10L

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 15.7A (Tc) 5V, 10V 75mOhm @ 12A, 10V 2.5V @ 250µA 28.9 nC @ 10 V ±20V 1465 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFM120ATF

IRFM120ATF

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,973 -

RFQ

IRFM120ATF

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta) 10V 200mOhm @ 1.15A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS7578

FDMS7578

MOSFET N-CH 25V 17A/28A 8PQFN

Fairchild Semiconductor
2,855 -

RFQ

FDMS7578

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDH50N50_F133

FDH50N50_F133

MOSFET N-CH 500V 48A TO247

Fairchild Semiconductor
2,969 -

RFQ

FDH50N50_F133

Scheda tecnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) - 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF770N15A

FDPF770N15A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,278 -

RFQ

FDPF770N15A

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 11.2 nC @ 10 V ±20V 765 pF @ 75 V - 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC2512SDC

FDMC2512SDC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,500 -

RFQ

FDMC2512SDC

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 2.5V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 3W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0300S

FDMS0300S

MOSFET N-CH 30V 31A/49A 8PQFN

Fairchild Semiconductor
2,037 -

RFQ

FDMS0300S

Scheda tecnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 49A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 3V @ 1mA 133 nC @ 10 V ±20V 8705 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDY100PZ

FDY100PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,771 -

RFQ

FDY100PZ

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 1.5V @ 250µA 1.4 nC @ 4.5 V ±8V 100 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA8051L

FDMA8051L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,688 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1260 pF @ 20 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5670

FDD5670

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,050 -

RFQ

FDD5670

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 52A (Ta) 6V, 10V 15mOhm @ 10A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 2739 pF @ 15 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Produttori mondiali
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