Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

Fairchild Semiconductor
2,378 -

RFQ

BS170

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
FDC638P

FDC638P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,201 -

RFQ

FDC638P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 48mOhm @ 4.5A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQI7N80TU

FQI7N80TU

MOSFET N-CH 800V 6.6A I2PAK

Fairchild Semiconductor
2,569 -

RFQ

FQI7N80TU

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS3662

FDMS3662

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,349 -

RFQ

FDMS3662

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8.9A (Ta), 39A (Tc) 10V 14.8mOhm @ 8.9A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 4620 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB13AN06A0

FDB13AN06A0

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,111 -

RFQ

FDB13AN06A0

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD5N50NZFTM

FDD5N50NZFTM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,214 -

RFQ

FDD5N50NZFTM

Scheda tecnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 10V 1.75Ohm @ 1.85A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76407D3ST

HUF76407D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
3,540 -

RFQ

HUF76407D3ST

Scheda tecnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

Fairchild Semiconductor
2,814 -

RFQ

FDH210N08

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V - 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639S3STNL

HUF75639S3STNL

56A, 100V, 0.025OHM, N-CHANNEL P

Fairchild Semiconductor
3,463 -

RFQ

HUF75639S3STNL

Scheda tecnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP50N06_F102

RFP50N06_F102

1-ELEMENT, N-CHANNEL POWER MOSFE

Fairchild Semiconductor
2,649 -

RFQ

RFP50N06_F102

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD4N60NZ

FDD4N60NZ

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,437 -

RFQ

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V 5V @ 250µA 10.8 nC @ 10 V ±25V 510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP3651U

FDP3651U

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,638 -

RFQ

FDP3651U

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 18mOhm @ 80A, 10V 5.5V @ 250µA 69 nC @ 10 V ±20V 5522 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N312AD3STNL

ISL9N312AD3STNL

MOSFET N-CH 30V 50A TO252AA

Fairchild Semiconductor
2,574 -

RFQ

ISL9N312AD3STNL

Scheda tecnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMA291P

FDMA291P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,124 -

RFQ

FDMA291P

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6.6A (Ta) 1.8V, 4.5V 42mOhm @ 6.6A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1000 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5670

FDS5670

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,425 -

RFQ

FDS5670

Scheda tecnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 6V, 10V 14mOhm @ 10A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 2900 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS6673BZ

FDMS6673BZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,931 -

RFQ

FDMS6673BZ

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 15.2A (Ta), 28A (Tc) 4.5V, 10V 6.8mOhm @ 15.2A, 10V 3V @ 250µA 130 nC @ 10 V ±25V 5915 pF @ 15 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC6683

FDMC6683

14A, 20V, 0.0084OHM, P-CHANNEL P

Fairchild Semiconductor
2,208 -

RFQ

FDMC6683

Scheda tecnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta), 18A (Tc) 1.8V, 5V 8.3mOhm @ 12A, 4.5V 1V @ 250µA 114 nC @ 4.5 V ±8V 7835 pF @ 10 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB19N20LTM

FQB19N20LTM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,641 -

RFQ

FQB19N20LTM

Scheda tecnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 5V, 10V 140mOhm @ 10.5A, 10V 2V @ 250µA 35 nC @ 5 V ±20V 2200 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2610

FDMC2610

N-CHANNEL ULTRAFET TRENCH MOSFET

Fairchild Semiconductor
2,580 -

RFQ

FDMC2610

Scheda tecnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 2.2A (Ta), 9.5A (Tc) 6V, 10V 200mOhm @ 2.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 960 pF @ 100 V - 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2523P

FDMC2523P

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,137 -

RFQ

FDMC2523P

Scheda tecnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Tc) 10V 1.5Ohm @ 1.5A, 10V 5V @ 250µA 9 nC @ 10 V ±30V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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