Microchip Technology APT5020BN

Numero parte
APT5020BN
Produttore
Microchip Technology
Categoria:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Imballaggio
TO-247AD
Scheda tecnica
Fudong Communication (Shenzhen) Group Co., Ltd.APT5020BN.pdf
Descrizione
MOSFET N-CH 500V 28A TO247AD
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7.How to contact us to get technical supports, such as APT5020BN pin diagram, APT5020BN datasheet?

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Immagine APT1001R1BN APT1001RBN APT5020BN APT5020BNFR
Numero parte APT1001R1BN APT1001RBN APT5020BN APT5020BNFR
Produttore Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Packaging Tube Tube Tube Tube
Series POWER MOS IV® POWER MOS IV® POWER MOS IV® POWER MOS IV®
ProductStatus Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V 500 V 500 V 500 V
Current-ContinuousDrain(Id)@25°C 28A (Tc) 28A (Tc) 28A (Tc) 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V
RdsOn(Max)@IdVgs 200mOhm @ 14A, 10V 200mOhm @ 14A, 10V 200mOhm @ 14A, 10V 200mOhm @ 14A, 10V
Vgs(th)(Max)@Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V 210 nC @ 10 V 210 nC @ 10 V 210 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 3500 pF @ 25 V 3500 pF @ 25 V 3500 pF @ 25 V 3500 pF @ 25 V
FETFeature - - - -
PowerDissipation(Max) 360W (Tc) 360W (Tc) 360W (Tc) 360W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole

APT5020BN Informazioni rilevanti

I seguenti componenti sono inclusi "APT5020BN" ISSI, Integrated Silicon Solutions Inc. APT5020BN.

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