Goford Semiconductor G30N02T

Numero parte
G30N02T
Produttore
Goford Semiconductor
Categoria:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Imballaggio
TO-220
Scheda tecnica
Fudong Communication (Shenzhen) Group Co., Ltd.G30N02T.pdf
Descrizione
N20V,RD(MAX)<[email protected],VTH0.5V~1.
Quantità

Prezzo unitario$0

Prezzo totale$0

Pagamento
payment
Spedizione
payment

Product details

1. How to order G30N02T on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that G30N02T is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the G30N02T. All suppliers must pass our qualification reviews before they can publish their products including G30N02T on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of G30N02T products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the G30N02T price and inventory displayed accurate?

The price and inventory of G30N02T fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of G30N02T?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G30N02T we delivered, we will accept the replacement or return of the G30N02T only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G30N02T.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G30N02T pin diagram, G30N02T datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Immagine 03N06 5P40 G30N02T GT100N12M GC11N65M
Numero parte 03N06 5P40 G30N02T GT100N12M GC11N65M
Produttore Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor
Packaging Tube Tube Tube Tube Tube
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V 20 V 20 V 20 V 20 V
Current-ContinuousDrain(Id)@25°C 30A (Ta) 30A (Ta) 30A (Ta) 30A (Ta) 30A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V 4.5V 4.5V 4.5V 4.5V
RdsOn(Max)@IdVgs 13mOhm @ 20A, 4.5V 13mOhm @ 20A, 4.5V 13mOhm @ 20A, 4.5V 13mOhm @ 20A, 4.5V 13mOhm @ 20A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs(Max) ±12V ±12V ±12V ±12V ±12V
InputCapacitance(Ciss)(Max)@Vds 900 pF @ 10 V 900 pF @ 10 V 900 pF @ 10 V 900 pF @ 10 V 900 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 40W (Ta) 40W (Ta) 40W (Ta) 40W (Ta) 40W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

G30N02T Informazioni rilevanti

I seguenti componenti sono inclusi "G30N02T" ISSI, Integrated Silicon Solutions Inc. G30N02T.

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