Harris Corporation RFD3N08L

Numero parte
RFD3N08L
Produttore
Harris Corporation
Categoria:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Imballaggio
I-PAK
Scheda tecnica
Fudong Communication (Shenzhen) Group Co., Ltd.RFD3N08L.pdf
Descrizione
N-CHANNEL POWER MOSFET
Quantità

Prezzo unitario$0

Prezzo totale$0

Pagamento
payment
Spedizione
payment

Product details

1. How to order RFD3N08L on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that RFD3N08L is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the RFD3N08L. All suppliers must pass our qualification reviews before they can publish their products including RFD3N08L on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of RFD3N08L products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the RFD3N08L price and inventory displayed accurate?

The price and inventory of RFD3N08L fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of RFD3N08L?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RFD3N08L we delivered, we will accept the replacement or return of the RFD3N08L only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RFD3N08L.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as RFD3N08L pin diagram, RFD3N08L datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Immagine RFP2P08 RFP2N08 RFP2N10 RFD4N06L RFP8P06LE
Numero parte RFP2P08 RFP2N08 RFP2N10 RFD4N06L RFP8P06LE
Produttore Harris Corporation Harris Corporation Harris Corporation Harris Corporation Harris Corporation
Packaging Bulk Bulk Bulk Bulk Bulk
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V 80 V 80 V 80 V 80 V
Current-ContinuousDrain(Id)@25°C 3A (Tc) 3A (Tc) 3A (Tc) 3A (Tc) 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V 5V 5V 5V 5V
RdsOn(Max)@IdVgs 800mOhm @ 1.5A, 5V 800mOhm @ 1.5A, 5V 800mOhm @ 1.5A, 5V 800mOhm @ 1.5A, 5V 800mOhm @ 1.5A, 5V
Vgs(th)(Max)@Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 8 nC @ 10 V 8 nC @ 10 V 8 nC @ 10 V 8 nC @ 10 V 8 nC @ 10 V
Vgs(Max) ±10V ±10V ±10V ±10V ±10V
InputCapacitance(Ciss)(Max)@Vds - - - - -
FETFeature - - - - -
PowerDissipation(Max) 30W (Tc) 30W (Tc) 30W (Tc) 30W (Tc) 30W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

RFD3N08L Informazioni rilevanti

I seguenti componenti sono inclusi "RFD3N08L" ISSI, Integrated Silicon Solutions Inc. RFD3N08L.

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