Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DF04M-E3/45

DF04M-E3/45

BRIDGE RECT 1PHASE 400V 1A DFM

Vishay General Semiconductor - Diodes Division
2,243 -

RFQ

DF04M-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
W005G-E4/51

W005G-E4/51

BRIDGE RECT 1PHASE 50V 1.5A WOG

Vishay General Semiconductor - Diodes Division
3,099 -

RFQ

W005G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 1.5 A 1 V @ 1 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
W01G-E4/51

W01G-E4/51

BRIDGE RECT 1PHASE 100V 1.5A WOG

Vishay General Semiconductor - Diodes Division
2,755 -

RFQ

W01G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 1.5 A 1 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
W06G-E4/51

W06G-E4/51

BRIDGE RECT 1PHASE 600V 1.5A WOG

Vishay General Semiconductor - Diodes Division
3,456 -

RFQ

W06G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 1.5 A 1 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
2W04G-E4/51

2W04G-E4/51

BRIDGE RECT 1PHASE 400V 2A WOG

Vishay General Semiconductor - Diodes Division
3,012 -

RFQ

2W04G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 2 A 1.1 V @ 2 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
2W10G-E4/51

2W10G-E4/51

BRIDGE RECT 1PHASE 1KV 2A WOG

Vishay General Semiconductor - Diodes Division
2,695 -

RFQ

2W10G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 2 A 1.1 V @ 2 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
W02G-E4/51

W02G-E4/51

BRIDGE RECT 1PHASE 200V 1.5A WOG

Vishay General Semiconductor - Diodes Division
2,437 -

RFQ

W02G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 1.5 A 1 V @ 1 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
W04G-E4/51

W04G-E4/51

BRIDGE RECT 1PHASE 400V 1.5A WOG

Vishay General Semiconductor - Diodes Division
2,103 -

RFQ

W04G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 1.5 A 1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
2W005G-E4/51

2W005G-E4/51

BRIDGE RECT 1PHASE 50V 2A WOG

Vishay General Semiconductor - Diodes Division
3,200 -

RFQ

2W005G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 2 A 1.1 V @ 2 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
B125C1500G-E4/51

B125C1500G-E4/51

BRIDGE RECT 1PHASE 200V 1.5A WOG

Vishay General Semiconductor - Diodes Division
3,693 -

RFQ

B125C1500G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 1.5 A 1 V @ 1.5 A 10 µA @ 125 V -40°C ~ 125°C (TJ) Through Hole 4-Circular, WOG
2W06G-E4/51

2W06G-E4/51

BRIDGE RECT 1PHASE 600V 2A WOG

Vishay General Semiconductor - Diodes Division
2,112 -

RFQ

2W06G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 2 A 1.1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
KBL10-E4/51

KBL10-E4/51

BRIDGE RECT 1PHASE 1KV 4A KBL

Vishay General Semiconductor - Diodes Division
3,322 -

RFQ

KBL10-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBPC6005-E4/51

GBPC6005-E4/51

BRIDGE RECT 1PHASE 50V 3A GBPC6

Vishay General Semiconductor - Diodes Division
2,066 -

RFQ

GBPC6005-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 3 A 1 V @ 3 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
VS-KBPC608PBF

VS-KBPC608PBF

BRIDGE RECT 1PHASE 800V 6A D-72

Vishay General Semiconductor - Diodes Division
3,208 -

RFQ

VS-KBPC608PBF

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 800 V 6 A 1.2 V @ 3 A 10 µA @ 800 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
KBU4D-E4/51

KBU4D-E4/51

BRIDGE RECT 1PHASE 200V 4A KBU

Vishay General Semiconductor - Diodes Division
3,842 -

RFQ

KBU4D-E4/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
VS-KBPC610PBF

VS-KBPC610PBF

BRIDGE RECT 1PHASE 1KV 6A D-72

Vishay General Semiconductor - Diodes Division
2,403 -

RFQ

VS-KBPC610PBF

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 1 kV 6 A 1.2 V @ 3 A 10 µA @ 1 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC808PBF

VS-KBPC808PBF

BRIDGE RECT 1PHASE 800V 8A D-72

Vishay General Semiconductor - Diodes Division
200 -

RFQ

VS-KBPC808PBF

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 800 V 8 A 1 V @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
KBU8K-E4/51

KBU8K-E4/51

BRIDGE RECT 1PHASE 800V 8A KBU

Vishay General Semiconductor - Diodes Division
3,083 -

RFQ

KBU8K-E4/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 10 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC3510W-E4/51

GBPC3510W-E4/51

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,236 -

RFQ

GBPC3510W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3504A

VS-GBPC3504A

BRIDGE RECT 1P 400V 35A GBPC-A

Vishay General Semiconductor - Diodes Division
3,130 -

RFQ

VS-GBPC3504A

Scheda tecnica

Bulk VS-GBPC Active Single Phase Standard 400 V 35 A - 2 mA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
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1500+ Media giornaliera RFQ
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1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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