Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BU1010A-E3/51

BU1010A-E3/51

BRIDGE RECT 1P 1KV 3A BU

Vishay General Semiconductor - Diodes Division
2,381 -

RFQ

BU1010A-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-1KAB20E

VS-1KAB20E

BRIDGE RECT 1P 200V 1.2A D-38

Vishay General Semiconductor - Diodes Division
3,023 -

RFQ

VS-1KAB20E

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 1.2 A 1.1 V @ 1.2 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
VS-1KAB100E

VS-1KAB100E

BRIDGE RECT 1PHASE 1KV 1.2A D-38

Vishay General Semiconductor - Diodes Division
3,971 -

RFQ

VS-1KAB100E

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 1.2 A 1.1 V @ 1.2 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
VS-1KAB10E

VS-1KAB10E

BRIDGE RECT 1P 100V 1.2A D-38

Vishay General Semiconductor - Diodes Division
2,014 -

RFQ

VS-1KAB10E

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 1.2 A 1.1 V @ 1.2 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
GBU6M-E3/51

GBU6M-E3/51

BRIDGE RECT 1PHASE 1KV 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,531 -

RFQ

GBU6M-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.8 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBPC602-E4/51

GBPC602-E4/51

BRIDGE RECT 1PHASE 200V 3A GBPC6

Vishay General Semiconductor - Diodes Division
3,969 -

RFQ

GBPC602-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 3 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
GBPC610-E4/51

GBPC610-E4/51

BRIDGE RECT 1PHASE 1KV 3A GBPC6

Vishay General Semiconductor - Diodes Division
3,305 -

RFQ

GBPC610-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3 A 1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
GBPC608-E4/51

GBPC608-E4/51

BRIDGE RECT 1PHASE 800V 3A GBPC6

Vishay General Semiconductor - Diodes Division
2,621 -

RFQ

GBPC608-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 3 A 1 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
GBPC604-E4/51

GBPC604-E4/51

BRIDGE RECT 1PHASE 400V 3A GBPC6

Vishay General Semiconductor - Diodes Division
3,190 -

RFQ

GBPC604-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 3 A 1 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
VS-KBPC8005PBF

VS-KBPC8005PBF

BRIDGE RECT 1PHASE 50V 8A D-72

Vishay General Semiconductor - Diodes Division
2,085 -

RFQ

VS-KBPC8005PBF

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 50 V 8 A 1 V @ 3 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC6005PBF

VS-KBPC6005PBF

BRIDGE RECT 1PHASE 50V 6A D-72

Vishay General Semiconductor - Diodes Division
2,029 -

RFQ

VS-KBPC6005PBF

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 50 V 6 A 1.2 V @ 3 A 10 µA @ 50 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC601PBF

VS-KBPC601PBF

BRIDGE RECT 1PHASE 100V 6A D-72

Vishay General Semiconductor - Diodes Division
3,791 -

RFQ

VS-KBPC601PBF

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 100 V 6 A 1.2 V @ 3 A 10 µA @ 100 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC801PBF

VS-KBPC801PBF

BRIDGE RECT 1PHASE 100V 8A D-72

Vishay General Semiconductor - Diodes Division
2,226 -

RFQ

VS-KBPC801PBF

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 100 V 8 A 1 V @ 3 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
KBU4B-E4/51

KBU4B-E4/51

BRIDGE RECT 1PHASE 100V 4A KBU

Vishay General Semiconductor - Diodes Division
3,757 -

RFQ

KBU4B-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU4M-E4/51

KBU4M-E4/51

BRIDGE RECT 1PHASE 1KV 4A KBU

Vishay General Semiconductor - Diodes Division
2,107 -

RFQ

KBU4M-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6J-E4/51

KBU6J-E4/51

BRIDGE RECT 1PHASE 600V 6A KBU

Vishay General Semiconductor - Diodes Division
2,001 -

RFQ

KBU6J-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8B-E4/51

KBU8B-E4/51

BRIDGE RECT 1PHASE 100V 8A KBU

Vishay General Semiconductor - Diodes Division
2,734 -

RFQ

KBU8B-E4/51

Scheda tecnica

Tray - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 10 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6G-E4/51

KBU6G-E4/51

BRIDGE RECT 1PHASE 400V 6A KBU

Vishay General Semiconductor - Diodes Division
2,641 -

RFQ

KBU6G-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8D-E4/51

KBU8D-E4/51

BRIDGE RECT 1PHASE 200V 8A KBU

Vishay General Semiconductor - Diodes Division
3,232 -

RFQ

KBU8D-E4/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 10 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC1201-E4/51

GBPC1201-E4/51

BRIDGE RECT 1PHASE 100V 12A GBPC

Vishay General Semiconductor - Diodes Division
3,170 -

RFQ

GBPC1201-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 12 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
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