Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
VS-GBPC2506W

VS-GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
2,218 -

RFQ

VS-GBPC2506W

Scheda tecnica

Bulk VS-GBPC Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 2 mA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC2510A

VS-GBPC2510A

BRIDGE RECT 1P 1KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division
3,197 -

RFQ

VS-GBPC2510A

Scheda tecnica

Tray VS-GBPC Active Single Phase Standard 1 kV 25 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
VS-GBPC2512A

VS-GBPC2512A

BRIDGE RECT 1P 1.2KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division
3,332 -

RFQ

VS-GBPC2512A

Scheda tecnica

Tray VS-GBPC Active Single Phase Standard 1.2 kV 25 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-A
VS-GBPC2512W

VS-GBPC2512W

BRIDGE RECT 1P 1.2KV 25A GBPC-W

Vishay General Semiconductor - Diodes Division
3,067 -

RFQ

VS-GBPC2512W

Scheda tecnica

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 2 mA @ 1200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-26MB05A

VS-26MB05A

BRIDGE RECT 1PHASE 50V 25A D-34

Vishay General Semiconductor - Diodes Division
3,341 -

RFQ

VS-26MB05A

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 25 A - 10 µA @ 50 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC1506W-E4/51

GBPC1506W-E4/51

BRIDGE RECT 1P 600V 15A GBPC-W

Vishay General Semiconductor - Diodes Division
180 -

RFQ

GBPC1506W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 15 A 1.1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3510W

VS-GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division
3,505 -

RFQ

VS-GBPC3510W

Scheda tecnica

Tray VS-GBPC Active Single Phase Standard 1 kV 35 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-GBPC3512W

VS-GBPC3512W

BRIDGE RECT 1P 1.2KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division
3,500 -

RFQ

VS-GBPC3512W

Scheda tecnica

Bulk VS-GBPC Active Single Phase Standard 1.2 kV 35 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-36MB05A

VS-36MB05A

BRIDGE RECT 1PHASE 50V 35A D-34

Vishay General Semiconductor - Diodes Division
2,984 -

RFQ

VS-36MB05A

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 35 A - 10 µA @ 1600 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB10A

VS-36MB10A

BRIDGE RECT 1PHASE 100V 35A D-34

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

VS-36MB10A

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 35 A - 10 µA @ 100 V -40°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC3502W-E4/51

GBPC3502W-E4/51

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,422 -

RFQ

GBPC3502W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-36MB20A

VS-36MB20A

BRIDGE RECT 1PHASE 200V 35A D-34

Vishay General Semiconductor - Diodes Division
3,156 -

RFQ

VS-36MB20A

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 35 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB40A

VS-36MB40A

BRIDGE RECT 1PHASE 400V 35A D-34

Vishay General Semiconductor - Diodes Division
2,513 -

RFQ

VS-36MB40A

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 35 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB60A

VS-36MB60A

BRIDGE RECT 1PHASE 600V 35A D-34

Vishay General Semiconductor - Diodes Division
3,401 -

RFQ

VS-36MB60A

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 35 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB80A

VS-36MB80A

BRIDGE RECT 1PHASE 800V 35A D-34

Vishay General Semiconductor - Diodes Division
2,672 -

RFQ

VS-36MB80A

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 35 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
GBPC3502-E4/51

GBPC3502-E4/51

BRIDGE RECT 1PHASE 200V 35A GBPC

Vishay General Semiconductor - Diodes Division
156 -

RFQ

GBPC3502-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3504-E4/51

GBPC3504-E4/51

BRIDGE RECT 1PHASE 400V 35A GBPC

Vishay General Semiconductor - Diodes Division
200 -

RFQ

GBPC3504-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
VS-26MB40A

VS-26MB40A

BRIDGE RECT 1PHASE 400V 25A D-34

Vishay General Semiconductor - Diodes Division
3,100 -

RFQ

VS-26MB40A

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-26MB80A

VS-26MB80A

BRIDGE RECT 1PHASE 800V 25A D-34

Vishay General Semiconductor - Diodes Division
3,961 -

RFQ

VS-26MB80A

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 25 A - 10 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-36MB100A

VS-36MB100A

BRIDGE RECT 1PHASE 1KV 35A D-34

Vishay General Semiconductor - Diodes Division
2,502 -

RFQ

VS-36MB100A

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 35 A - 10 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
Total 1397 Record«Prev1... 1213141516171819...70Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente