Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
G3SBA20-M3/45

G3SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,799 -

RFQ

G3SBA20-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA20-M3/51

G3SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,215 -

RFQ

G3SBA20-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/45

G3SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,680 -

RFQ

G3SBA80-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/51

G3SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,752 -

RFQ

G3SBA80-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-1KAB05E

VS-1KAB05E

RECTIFIER BRIDGE 50V 1.5A D-38

Vishay General Semiconductor - Diodes Division
3,796 -

RFQ

Tube * Active - - - - - - - - -
GBL04-M3/45

GBL04-M3/45

4A 400V GPP INLINE BRIDGE

Vishay General Semiconductor - Diodes Division
3,967 -

RFQ

GBL04-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/51

GBL01-M3/51

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
3,270 -

RFQ

GBL01-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/51

GBL02-M3/51

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,452 -

RFQ

GBL02-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL04-M3/51

GBL04-M3/51

BRIDGE RECT 1PHASE 400V 4A GBL

Vishay General Semiconductor - Diodes Division
2,449 -

RFQ

GBL04-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/51

GBL06-M3/51

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
2,891 -

RFQ

GBL06-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/51

GBL08-M3/51

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

GBL08-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/51

GBL10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
2,851 -

RFQ

GBL10-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/45

GBL01-M3/45

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
2,943 -

RFQ

GBL01-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/45

GBL02-M3/45

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,162 -

RFQ

GBL02-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/45

GBL06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
3,980 -

RFQ

GBL06-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/45

GBL08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,414 -

RFQ

GBL08-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/45

GBL10-M3/45

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
3,132 -

RFQ

GBL10-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G3SBA60-M3/45

G3SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
3,593 -

RFQ

G3SBA60-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60-M3/51

G3SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,721 -

RFQ

G3SBA60-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBB05

VS-2KBB05

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division
3,762 -

RFQ

Tube * Active - - - - - - - - -
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1500+ Media giornaliera RFQ
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