Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU8M-M3/51

GBU8M-M3/51

BRIDGE RECT 1PHASE 1KV 8A GBU

Vishay General Semiconductor - Diodes Division
2,685 -

RFQ

GBU8M-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA20-M3/45

G5SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,033 -

RFQ

G5SBA20-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/45

G5SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
2,911 -

RFQ

G5SBA60-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/45

G5SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,455 -

RFQ

G5SBA80-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
2,542 -

RFQ

BU1006A-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
2,348 -

RFQ

BU1008A-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1P 1KV 3A BU

Vishay General Semiconductor - Diodes Division
2,111 -

RFQ

BU1010A-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1206-E3/51

BU1206-E3/51

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,514 -

RFQ

BU1206-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-E3/51

BU1208-E3/51

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,235 -

RFQ

BU1208-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1006A-M3/51

BU1006A-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,463 -

RFQ

BU1006A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-M3/51

BU1008A-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
3,416 -

RFQ

BU1008A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-M3/51

BU1010A-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,688 -

RFQ

BU1010A-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-E3/45

BU1010-E3/45

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,182 -

RFQ

BU1010-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-2KBB05R

VS-2KBB05R

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division
2,954 -

RFQ

Tube * Active - - - - - - - - -
GSIB640-E3/45

GSIB640-E3/45

BRIDGE RECT 1P 400V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,039 -

RFQ

GSIB640-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 2.8 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU1006-M3/51

BU1006-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
3,084 -

RFQ

BU1006-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-M3/51

BU1008-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
2,305 -

RFQ

BU1008-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-M3/51

BU1010-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
2,270 -

RFQ

BU1010-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6A-M3/45

GBU6A-M3/45

BRIDGE RECT 1PHASE 50V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,436 -

RFQ

GBU6A-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 50 V 3.8 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8A-M3/45

GBU8A-M3/45

BRIDGE RECT 1PHASE 50V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,372 -

RFQ

GBU8A-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 50 V 3.9 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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