Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
VS-KBPC810

VS-KBPC810

BRIDGE RECTIFIER 1000V 8.0A D-72

Vishay General Semiconductor - Diodes Division
3,492 -

RFQ

VS-KBPC810

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 1 kV 8 A 1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC608

VS-KBPC608

BRIDGE RECTIFIER 800V 6.0A D-72

Vishay General Semiconductor - Diodes Division
2,165 -

RFQ

VS-KBPC608

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 800 V 6 A 1.2 V @ 3 A 10 µA @ 800 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC806

VS-KBPC806

BRIDGE RECT 1PHASE 600V 8A D-72

Vishay General Semiconductor - Diodes Division
2,897 -

RFQ

VS-KBPC806

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 600 V 8 A 1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
GBPC12005W-E4/51

GBPC12005W-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,565 -

RFQ

GBPC12005W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1204W-E4/51

GBPC1204W-E4/51

BRIDGE RECT 1P 400V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
2,953 -

RFQ

GBPC1204W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 12 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1208-E4/51

GBPC1208-E4/51

BRIDGE RECT 1PHASE 800V 12A GBPC

Vishay General Semiconductor - Diodes Division
2,070 -

RFQ

GBPC1208-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC1208W-E4/51

GBPC1208W-E4/51

BRIDGE RECT 1P 800V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,490 -

RFQ

GBPC1208W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1210W-E4/51

GBPC1210W-E4/51

BRIDGE RECT 1P 1KV 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,241 -

RFQ

GBPC1210W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC15005W-E4/51

GBPC15005W-E4/51

BRIDGE RECT 1P 50V 15A GBPC-W

Vishay General Semiconductor - Diodes Division
3,736 -

RFQ

GBPC15005W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 15 A 1.1 V @ 7.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1506-E4/51

GBPC1506-E4/51

BRIDGE RECT 1PHASE 600V 15A GBPC

Vishay General Semiconductor - Diodes Division
2,956 -

RFQ

GBPC1506-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 15 A 1.1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC25005W-E4/51

GBPC25005W-E4/51

BRIDGE RECT 1P 50V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
3,573 -

RFQ

GBPC25005W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 25 A 1.1 V @ 12.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC35005W-E4/51

GBPC35005W-E4/51

BRIDGE RECT 1P 50V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
2,779 -

RFQ

GBPC35005W-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-130MT100KPBF

VS-130MT100KPBF

BRIDGE RECT 3PHASE 1KV 130A MT-K

Vishay General Semiconductor - Diodes Division
3,068 -

RFQ

VS-130MT100KPBF

Scheda tecnica

Tray - Active Three Phase Standard 1 kV 130 A - - -40°C ~ 150°C (TJ) Chassis Mount MT-K Module
VS-26MB06

VS-26MB06

BRIDGE RECT 1PHASE 600V 25A D-34

Vishay General Semiconductor - Diodes Division
2,140 -

RFQ

Tray - Active Single Phase Standard 600 V 25 A - 10 µA @ 60 V - QC Terminal 4-Square, D-34
VS-36MT5

VS-36MT5

BRIDGE RECT 3PHASE 600V 35A D-63

Vishay General Semiconductor - Diodes Division
2,181 -

RFQ

Tray - Active Three Phase Standard 600 V 35 A - 10 µA @ 50 V - QC Terminal 5-Square, D-63
VS-40MT160PAPBF

VS-40MT160PAPBF

BRIDGE RECT 3P 1.6KV 40A 7MTPA

Vishay General Semiconductor - Diodes Division
2,016 -

RFQ

VS-40MT160PAPBF

Scheda tecnica

Tray - Active Three Phase Standard 1.6 kV 40 A 1.51 V @ 100 A - -40°C ~ 150°C (TJ) Chassis Mount 7-MTPA
VS-70MT160PAPBF

VS-70MT160PAPBF

BRIDGE RECT 3PHASE 1.6KV 75A MTK

Vishay General Semiconductor - Diodes Division
2,729 -

RFQ

VS-70MT160PAPBF

Scheda tecnica

Tray - Active Three Phase Standard 1.6 kV 75 A - - -40°C ~ 150°C (TJ) Chassis Mount MTK
VS-70MT160P-P

VS-70MT160P-P

BRIDGE RECT 3P 1.6KV 75A 12MTP

Vishay General Semiconductor - Diodes Division
2,266 -

RFQ

VS-70MT160P-P

Scheda tecnica

Tray - Active Three Phase Standard 1.6 kV 75 A - - -40°C ~ 150°C (TJ) Chassis Mount 12-MTP Module
VS-40MT160P-P

VS-40MT160P-P

BRIDGE RECT 3P 1.6KV 45A 12MTP

Vishay General Semiconductor - Diodes Division
2,742 -

RFQ

VS-40MT160P-P

Scheda tecnica

Tube - Active Three Phase Standard 1.6 kV 45 A 1.51 V @ 100 A - -40°C ~ 150°C (TJ) Chassis Mount 12-MTP Module
VS-SA61BA60

VS-SA61BA60

BRIDGE RECT 1P 600V 61A SOT227

Vishay General Semiconductor - Diodes Division
3,017 -

RFQ

VS-SA61BA60

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 61 A - - -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC
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