Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BU2506-M3/51

BU2506-M3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,215 -

RFQ

BU2506-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2508-M3/51

BU2508-M3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

BU2508-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/51

BU2510-M3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
3,881 -

RFQ

BU2510-M3/51

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2006-M3/45

BU2006-M3/45

BRIDGE RECT 1P 600V 20A BU

Vishay General Semiconductor - Diodes Division
2,091 -

RFQ

BU2006-M3/45

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2008-M3/45

BU2008-M3/45

BRIDGE RECT 1P 800V 20A BU

Vishay General Semiconductor - Diodes Division
2,812 -

RFQ

BU2008-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 20 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU25H06-M3/P

BU25H06-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,426 -

RFQ

BU25H06-M3/P

Scheda tecnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-M3/P

BU25H08-M3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,673 -

RFQ

BU25H08-M3/P

Scheda tecnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H06-E3/P

BU25H06-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,087 -

RFQ

BU25H06-E3/P

Scheda tecnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU25H08-E3/P

BU25H08-E3/P

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,415 -

RFQ

BU25H08-E3/P

Scheda tecnica

Tube isoCink+™ Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 175°C (TJ) Through Hole 4-SIP, BU
BU2508-M3/45

BU2508-M3/45

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
2,642 -

RFQ

BU2508-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2510-M3/45

BU2510-M3/45

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
2,862 -

RFQ

BU2510-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB2520N-M3/45

GSIB2520N-M3/45

BRIDGE RECT 1P 200V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,024 -

RFQ

GSIB2520N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 200 V 25 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2540N-M3/45

GSIB2540N-M3/45

BRIDGE RECT 1P 400V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,538 -

RFQ

GSIB2540N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 400 V 25 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2560N-M3/45

GSIB2560N-M3/45

BRIDGE RECT 1P 600V 25A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,620 -

RFQ

GSIB2560N-M3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 25 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
PB3008-E3/45

PB3008-E3/45

BRIDGE RECT 1P 800V 30A PB

Vishay General Semiconductor - Diodes Division
3,487 -

RFQ

PB3008-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 30 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
KBU6A-E4/51

KBU6A-E4/51

BRIDGE RECT 1PHASE 50V 6A KBU

Vishay General Semiconductor - Diodes Division
2,484 -

RFQ

KBU6A-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 6 A 1 V @ 6 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8A-E4/51

KBU8A-E4/51

BRIDGE RECT 1PHASE 50V 8A KBU

Vishay General Semiconductor - Diodes Division
3,418 -

RFQ

KBU8A-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 8 A 1 V @ 8 A 10 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
VS-KBPC6005

VS-KBPC6005

BRIDGE RECTIFIER 50V 6.0A D-72

Vishay General Semiconductor - Diodes Division
3,319 -

RFQ

VS-KBPC6005

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 50 V 6 A 1.2 V @ 3 A 10 µA @ 50 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC606

VS-KBPC606

BRIDGE RECTIFIER 600V 6.0A D-72

Vishay General Semiconductor - Diodes Division
2,068 -

RFQ

VS-KBPC606

Scheda tecnica

Bulk VS-KBPC6 Active Single Phase Standard 600 V 6 A 1.2 V @ 3 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-KBPC802

VS-KBPC802

BRIDGE RECTIFIER 200V 8.0A D-72

Vishay General Semiconductor - Diodes Division
3,539 -

RFQ

VS-KBPC802

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 200 V 8 A 1 V @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
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1500+ Media giornaliera RFQ
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