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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STTH3012DDIODE GEN PURP 1.2KV 30A TO220AC STMicroelectronics |
2,923 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 115 ns | 20 µA @ 1200 V | 1200 V | 30A | 175°C (Max) | 2.25 V @ 30 A | |
|
GE1102RECTIFIER DIODE, 2.5A, 100V Rochester Electronics, LLC |
1,000 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 35 ns | 2 µA @ 100 V | 100 V | 2.5A | -65°C ~ 175°C | 950 mV @ 2 A | |
|
VS-41HF10DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,643 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
|
SD125SB45B.T2PIV 45V IO 15A CHIP SIZE 125MIL SMC Diode Solutions |
2,234 | - |
RFQ |
Scheda tecnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 5V, 1MHz | - | 400 µA @ 45 V | 45 V | 15A | -55°C ~ 175°C | 640 mV @ 15 A | |
|
JANTX1N5553/TRSTD RECTIFIER Microchip Technology |
3,242 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 5A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
|
1N5811E3/TRRECTIFIER UFR,FRR Microchip Technology |
3,508 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
JANTX1N5617/TRRECTIFIER UFR,FRR Microchip Technology |
3,815 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
SE20DGHM3/IDIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 400 V | 400 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
VS-41HFR10DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
BYV98-100-TAPDIODE AVALANCHE 100V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
JANTX1N5616US/TRSTD RECTIFIER Microchip Technology |
2,869 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
|
VS-95PF40DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,436 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-80PF40DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.46 V @ 220 A | |
|
|
SE20DJHM3/IDIODE GEN PURP 600V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 600 V | 600 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
JANTX1N5819-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,545 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/586 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 70pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
|
BYW172F-TAPDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,012 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
JAN1N5186/TRRECTIFIER UFR,FRR Microchip Technology |
2,425 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/424 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
VS-95PFR40DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,091 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-80PFR40DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,178 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
|
V40DL45HM3_A/IDIODE SCHOTTKY 45V 40A TO263AC Vishay General Semiconductor - Diodes Division |
3,616 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 mA @ 45 V | 45 V | 40A | -40°C ~ 150°C | 660 mV @ 40 A |
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