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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SD125SA45B.T2 PIV 45V IO 15A CHIP SIZE 125MIL SMC Diode Solutions	3,164	-	RFQ	Scheda tecnica	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	800pF @ 5V, 1MHz	-	1.5 mA @ 45 V	45 V	15A	-55°C ~ 150°C	560 mV @ 15 A
JAN1N5819-1/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,874	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/586	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 45 V	45 V	1A	-65°C ~ 150°C	490 mV @ 1 A
1N5809E3/TR RECTIFIER UFR,FRR Microchip Technology	2,879	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	-	100 V	6A	-65°C ~ 175°C	875 mV @ 4 A
VS-50PF120W DIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division	3,774	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	-	1200 V	50A	-55°C ~ 180°C	1.4 V @ 125 A
SE20DBHM3/I DIODE GEN PURP 100V 3.9A TO263AC Vishay General Semiconductor - Diodes Division	2,231	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	150pF @ 4V, 1MHz	3 µs	25 µA @ 100 V	100 V	3.9A	-55°C ~ 175°C	1.2 V @ 20 A
JAN1N5617US/TR RECTIFIER UFR,FRR Microchip Technology	3,834	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	150 ns	500 nA @ 400 V	400 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
SD125SB45A.T2 PIV 45V IO 15A CHIP SIZE 125MIL SMC Diode Solutions	2,478	-	RFQ	Scheda tecnica	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	800pF @ 5V, 1MHz	-	400 µA @ 45 V	45 V	15A	-55°C ~ 175°C	640 mV @ 15 A
JANTXV1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2,886	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 600 V	600 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
1N6643US/TR SIGNAL/COMPUTER DIODE Microchip Technology	2,997	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	20 ns	50 nA @ 50 V	50 V	300mA	-65°C ~ 175°C	1.2 V @ 100 mA
VS-50PFR120W DIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division	2,327	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	-	1200 V	50A	-55°C ~ 180°C	1.4 V @ 125 A
SE20DDHM3/I DIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division	3,527	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	150pF @ 4V, 1MHz	3 µs	25 µA @ 200 V	200 V	3.9A	-55°C ~ 175°C	1.2 V @ 20 A
NTE622 D-400V .5A FAST REC SMT NTE Electronics, Inc	606	-	RFQ	Scheda tecnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	500mA	-65°C ~ 175°C	1.2 V @ 500 mA
STTH3006W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	2,409	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	25 µA @ 600 V	600 V	30A	175°C (Max)	1.85 V @ 30 A
P600U DIODE STD D8X7.5 1400V 6A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1400 V	1400 V	6A	-50°C ~ 175°C	1.1 V @ 6 A
IDH02G120C5XKSA1 DIODE SCHOT 1200V 2A TO220-2-1 Infineon Technologies	997	-	RFQ	Scheda tecnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	182pF @ 1V, 1MHz	0 ns	18 µA @ 1200 V	1200 V	2A (DC)	175°C (Max)	1.65 V @ 2 A
1N5062 R-800PRV 1A NTE Electronics, Inc	460	-	RFQ	Scheda tecnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	40pF @ 0V, 1MHz	4 µs	1 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1 V @ 1 A
SCS306AMC DIODES SILICON CARBIDE Rohm Semiconductor	2,597	-	RFQ	Scheda tecnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.5 V @ 6 A
FE6F DIODE SFR D8X7.5 300V 6A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 300 V	300 V	6A	-50°C ~ 175°C	1 V @ 5 A
VS-8EWF02S-M3 DIODE GEN PURP 200V 8A TO252AA Vishay General Semiconductor - Diodes Division	2,143	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	100 µA @ 200 V	200 V	8A	-40°C ~ 150°C	1.2 V @ 8 A
FE6G DIODE SFR D8X7.5 400V 6A Diotec Semiconductor	1,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 400 V	400 V	6A	-50°C ~ 175°C	1.3 V @ 5 A