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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5620/TRSTD RECTIFIER Microchip Technology |
2,549 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
BYV98-100-TRDIODE AVALANCHE 100V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,895 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
JAN1N5187DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
3,829 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/424 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
JANTX1N914UR/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,458 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 5 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 175°C | 1.2 V @ 50 mA | |
|
|
1N6643DIODE GEN PURPOSE Microchip Technology |
3,803 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
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|
SFS1006GHMNGDIODE GEN PURP 400V 10A TO263AB Taiwan Semiconductor Corporation |
2,640 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 5 A |
|
|
JANTX1N5554DIODE GEN PURP 1KV 5A AXIAL Microchip Technology |
3,793 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 2 µA @ 1000 V | 1000 V | 5A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
|
BYW172F-TRDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,043 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
JAN1N5623/TRRECTIFIER UFR,FRR Microchip Technology |
3,836 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 500 nA @ 1 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
1N5615US/TRUFR,FRR Microchip Technology |
2,051 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 12V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
FFSH10120A1200V 10A SIC SBD onsemi |
2,749 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 612pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 17A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A | |
|
|
SDT10A60VCTSCHOTTKY RECTIFIER TO220AB Diodes Incorporated |
3,591 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
2,188 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JANTX1N3595UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,710 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 3 µs | 1 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA | |
|
|
SF5403-TAPDIODE GEN PURP 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
P1000BDIODE STD D8X7.5 100V 10A Diotec Semiconductor |
1,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 100 V | 100 V | 10A | -50°C ~ 175°C | 1.05 V @ 10 A | |
|
|
MNS1N5811US/TRUFR,FRR Microchip Technology |
3,749 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
STPSC5H12DDIODE SCHOTTKY 1.2KV 5A TO220AC STMicroelectronics |
2,172 | - |
RFQ |
Scheda tecnica |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 450pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 5A | -40°C ~ 175°C | 1.5 V @ 5 A |
|
1N3614/TRSTD RECTIFIER Microchip Technology |
3,416 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
P1000DDIODE STD D8X7.5 200V 10A Diotec Semiconductor |
1,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 200 V | 200 V | 10A | -50°C ~ 175°C | 1.05 V @ 10 A |
- 1500+ Media giornaliera RFQ
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