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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-15ETX06S-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,270 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
FFSP20120ADIODE SCHOT 1200V 20A TO220-2L onsemi |
3,357 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1220pF @ 1V, 100KHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.75 V @ 20 A | |
|
RGP30A-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,976 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
JANTXV1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
3,809 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
JANTX1N6638UDIODE GEN PURP 125V 300MA B-MELF Microchip Technology |
3,115 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 4.5 ns | 500 nA @ 125 V | 125 V | 300mA (DC) | -65°C ~ 175°C | 1.1 V @ 200 mA | |
|
1N5806RECTIFIER UFR,FRR Microchip Technology |
2,151 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JANTX1N3957DIODE GEN PURP 1KV 1A Microchip Technology |
3,528 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
RGP30B-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,408 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
1N5819UR-15A SCHOTTKY RECTIFIER Microchip Technology |
2,586 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 50 µA @ 45 V | 45 V | 1A | -65°C ~ 150°C | 490 mV @ 1 A | ||
|
|
JANTX1N6638USRECTIFIER Microchip Technology |
2,709 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 4.5 ns | - | 125 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA | ||
|
1N5419/TRRECTIFIER UFR,FRR Microchip Technology |
3,784 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
|
VS-95PF160WDIODE GEN PURP 1.6KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,792 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1600 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
RGP30D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,609 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
1N6857-1SCHOTTKY RECTIFIER Microchip Technology |
2,671 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JAN1N3595UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,527 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 3 µs | 1 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA | |
|
|
JAN1N4248DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
3,623 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
CDLL5194DIODE GEN PURP 80V 200MA DO213AA Microchip Technology |
3,534 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
UPR40E3/TR7DIODE GEN PURP 400V 2A POWERMITE Microchip Technology |
2,802 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
|
RGP25J-E3/54DIODE GEN PURP 600V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,407 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
CDLL5818E3DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,630 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 0.9pF @ 5V, 1MHz | - | 100 µA @ 30 V | 30 V | 1A | - | 600 mV @ 1 A |
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