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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S5BHE3_A/HDIODE GEN PURP 100V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,978 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
VS-10WQ045FNTRRHM3DIODE SCHOTTKY 45V 10MA DPAK Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 100 V | 45 V | 10mA | -40°C ~ 175°C | 630 mV @ 10 A |
|
|
S5DHE3_A/HDIODE GEN PURP 200V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,556 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
|
VS-10WQ045FNHM3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
3,887 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A |
|
|
S5KHE3_A/HDIODE GEN PURP 800V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,767 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
|
VS-10WQ045FNTRHM3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A |
|
VS-20ETS08STRL-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-20ETS12STRL-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,336 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-20ETS12STRR-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,586 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
VS-SD200R16M12CDIODE GP 1.6KV 200A DO205AC Vishay General Semiconductor - Diodes Division |
2,654 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 1600 V | 200A | -40°C ~ 180°C | 1.4 V @ 630 A | |
|
VS-SD1053C22S30LDIODE GP 3KV 920A DO200AB Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | 3 µs | - | 3000 V | 920A | -40°C ~ 150°C | 2.26 V @ 1500 A | |
|
|
VS-HFA25TB60SL-M3DIODE GEN PURP 600V 25A D2PAK Vishay General Semiconductor - Diodes Division |
3,112 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 20 µA @ 600 V | 600 V | 25A (DC) | -55°C ~ 150°C | 2 V @ 50 A |
|
|
VS-HFA25TB60SR-M3DIODE GEN PURP 600V 25A D2PAK Vishay General Semiconductor - Diodes Division |
2,847 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 20 µA @ 600 V | 600 V | 25A (DC) | -55°C ~ 150°C | 2 V @ 50 A |
|
|
VS-20ETS08STRR-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-25ETS08STRL-M3DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,902 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS08STRR-M3DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,578 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS10STRL-M3DIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,869 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS10STRR-M3DIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,308 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS12STRL-M3DIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,037 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS12STRR-M3DIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,934 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A |
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