+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-18TQ045STRRHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,993 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 45 V | 45 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
BYG22AHM3_A/HDIODE AVALANCHE 50V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,282 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
VS-18TQ045STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,429 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 45 V | 45 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
|
BYG22AHM3_A/IDIODE AVALANCHE 50V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,299 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
BYG22BHM3_A/HDIODE AVALANCHE 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,139 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
BYG22BHM3_A/IDIODE AVALANCHE 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,948 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
BYG22DHM3_A/HDIODE AVALANCHE 200V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,768 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
BYG22DHM3_A/IDIODE AVALANCHE 200V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,060 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
;;2.jpg)
|
BYM13-50HE3/96DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
BYM13-60HE3/96DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,706 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
VS-SD1100C25CDIODE GEN PURP 2.5KV 1100A B-43 Vishay General Semiconductor - Diodes Division |
2,530 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 35 mA @ 2500 V | 2500 V | 1100A | - | 1.44 V @ 1500 A | |
|
|
VS-SD803C08S10CDIODE GEN PURP 800V 845A B-43 Vishay General Semiconductor - Diodes Division |
3,873 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 1 µs | 45 mA @ 800 V | 800 V | 845A | - | 1.89 V @ 2655 A | |
|
VS-150KS30DIODE GEN PURP 300V 150A B42 Vishay General Semiconductor - Diodes Division |
3,900 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 300 V | 300 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | |
|
VS-303UA250DIODE GEN PURP 2.5KV 300A DO9 Vishay General Semiconductor - Diodes Division |
2,628 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 2500 V | 300A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
|
VS-150KSR30DIODE GEN PURP 300V 150A B42 Vishay General Semiconductor - Diodes Division |
3,250 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 35 mA @ 300 V | 300 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | |
|
|
VS-303URA250DIODE GEN PURP 2.5KV 300A DO9 Vishay General Semiconductor - Diodes Division |
2,479 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 2500 V | 300A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
VS-20ETS08FP-M3DIODE GEN PURP 800V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-10ETF02FP-M3DIODE GEN PURP 200V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,483 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-10ETF04FP-M3DIODE GEN PURP 400V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,645 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 200 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-10ETF06FP-M3DIODE GEN PURP 600V 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,912 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 200 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
