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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FESB8CTHE3_A/PDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
FESB8DTHE3_A/PDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
UGB8FTHE3_A/PDIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,094 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
AS3BJHM3_A/HDIODE AVALANCHE 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,093 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 20 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
UGB8GTHE3_A/PDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,183 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
|
AS3BJHM3_A/IDIODE AVALANCHE 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,637 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 20 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
VB20120S-E3/8WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,636 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
AS3BDHM3_A/HDIODE AVALANCHE 200V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,269 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 200 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
VS-18TQ035S-M3DIODE SCHOTTKY 35V 18A D2PAK Vishay General Semiconductor - Diodes Division |
3,439 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | |
|
|
AS3BDHM3_A/IDIODE AVALANCHE 200V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,384 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 200 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
AS3BGHM3_A/HDIODE AVALANCHE 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,877 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 400 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
VS-MBRB1645-M3DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,567 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 35 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | ||
|
|
AS3BGHM3_A/IDIODE AVALANCHE 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,202 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 400 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
SL23HM3_A/H2A 30V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
2,457 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 440 mV @ 2 A |
|
|
SL23HM3_A/I2A 30V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 440 mV @ 2 A |
|
1N3612GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,576 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N3613GP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,829 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N3957GP-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
S5AHE3_A/HDIODE GEN PURP 50V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
VS-10WQ045FNTRLHM3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A |
- 1500+ Media giornaliera RFQ
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