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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS1H10-M3/61TDIODE SCHOTTKY 1A 100V DO-214AC Vishay General Semiconductor - Diodes Division |
5,335 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 90 V | 100 V | 1A | -65°C ~ 175°C | 860 mV @ 2 A | |
|
SD103B-TAPDIODE SCHOTTKY 30V SGL DO35 Vishay General Semiconductor - Diodes Division |
75,019 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | 200mA | 125°C (Max) | 600 mV @ 200 mA |
|
SD103B-TRDIODE SCHOTTKY 30V DO35 Vishay General Semiconductor - Diodes Division |
68,386 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | - | 125°C (Max) | 600 mV @ 200 mA | |
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|
AS1PM-M3/84ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
6,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
SB240-E3/73DIODE SCHOTTKY 40V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
S3JHE3_A/HDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
14,335 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
BYG10D-E3/TRDIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
11,808 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
VS-150U100DLDIODE GP 1000V 150A DO-8 Vishay General Semiconductor - Diodes Division |
3,597 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1000 V | 150A | -40°C ~ 180°C | 1.47 V @ 600 A | |
|
SB540A-E3/54DIODE SCHOTTKY 40V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,172 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 500 mV @ 5 A | |
|
BAV21WS-E3-08DIODE GEN PURP 200V 250MA SOD323 Vishay General Semiconductor - Diodes Division |
11,008 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
BYW54-TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
23,370 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
VS-150KS60DIODE GEN PURP 600V 150A B42 Vishay General Semiconductor - Diodes Division |
2,269 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 600 V | 600 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | |
|
|
VS-150KSR60DIODE GEN PURP 600V 150A B42 Vishay General Semiconductor - Diodes Division |
2,251 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 35 mA @ 600 V | 600 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | |
|
|
SS16-M3/61TDIODE SCHOTTKY 1A 60V DO-214AC Vishay General Semiconductor - Diodes Division |
8,882 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -65°C ~ 150°C | 750 mV @ 1 A | |
|
|
SB3H100-E3/54DIODE SCHOTTKY 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
19,525 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 20 µA @ 100 V | 100 V | 3A | 175°C (Max) | 800 mV @ 3 A | |
|
|
SB550A-E3/54DIODE SCHOTTKY 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,402 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -65°C ~ 150°C | 700 mV @ 5 A | |
|
BAT54-HE3-08DIODE SCHOTTKY 30V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
44,829 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
|
|
SS2PH9-M3/84ADIODE SCHOTTKY 90V 2A DO220AA Vishay General Semiconductor - Diodes Division |
6,500 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
SF1200-TAPDIODE GEN PURP 1.2KV 1A SOD57 Vishay General Semiconductor - Diodes Division |
22,382 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 1200 V | 1200 V | 1A | 125°C (Max) | 3.4 V @ 1 A | |
|
|
SD103C-TRDIODE SCHOTTKY 20V DO35 Vishay General Semiconductor - Diodes Division |
18,724 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 10 V | 20 V | - | 125°C (Max) | 600 mV @ 200 mA |
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