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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SD153N08S10PVDIODE GEN PURP 800V 150A DO205AC Vishay General Semiconductor - Diodes Division |
2,466 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | 1 µs | 35 mA @ 800 V | 800 V | 150A | -40°C ~ 125°C | 1.55 V @ 470 A | |
|
VS-1N3879DIODE GEN PURP 50V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,524 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 15 µA @ 50 V | 50 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | ||
|
|
VS-1N3880DIODE GEN PURP 100V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,637 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 15 µA @ 100 V | 100 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | ||
|
VS-1N3881DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 15 µA @ 200 V | 200 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
VS-1N3882DIODE GEN PURP 300V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 15 µA @ 300 V | 300 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | ||
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VS-45APS12LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
369 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A |
|
UF5402-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
4,149 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
MURS340HE3_A/IDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
6,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 3 V | 400 V | 3A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
BYV26E-TAPDIODE AVALANCHE 1000V 1A SOD57 Vishay General Semiconductor - Diodes Division |
48,687 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
|
VS-1N3883DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,060 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 15 µA @ 400 V | 400 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | ||
|
|
VS-1N3889DIODE GEN PURP 50V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,049 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 25 µA @ 50 V | 50 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | ||
|
VS-1N3890DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,452 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 25 µA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
VS-1N3891DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,396 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 25 µA @ 200 V | 200 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
VS-1N3892DIODE GEN PURP 300V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,883 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 25 µA @ 300 V | 300 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
EGF1A-E3/67ADIODE GEN PURP 50V 1A DO214BA Vishay General Semiconductor - Diodes Division |
13,009 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
BYM11-100-E3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
59,892 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VS-SD200R20PCDIODE GEN PURP 2KV 200A DO205 Vishay General Semiconductor - Diodes Division |
3,283 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 15 mA @ 2000 V | 2000 V | 200A | -40°C ~ 180°C | 1.4 V @ 630 A | |
|
VS-SD400C16CDIODE GP 1.6KV 800A DO200AA Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 15 mA @ 1600 V | 1600 V | 800A | - | 1.86 V @ 1930 A | |
|
SS10PH10-M3/87ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
7,194 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
|
US1B-E3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,915 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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