Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IRD3902

IRD3902

DIODE GEN PURP 300V 20A DO203AB

Vishay General Semiconductor - Diodes Division
2,238 -

RFQ

IRD3902

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Chassis, Stud Mount - 350 ns 50 µA @ 300 V 300 V 20A -40°C ~ 125°C 1.65 V @ 62.8 A
1N4005/54

1N4005/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,043 -

RFQ

1N4005/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -50°C ~ 150°C 1.1 V @ 1 A
IRD3903

IRD3903

DIODE GEN PURP 400V 20A DO203AB

Vishay General Semiconductor - Diodes Division
3,472 -

RFQ

IRD3903

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Chassis, Stud Mount - 350 ns 50 µA @ 400 V 400 V 20A -40°C ~ 125°C 1.65 V @ 62.8 A
1N4007/54

1N4007/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,834 -

RFQ

1N4007/54

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.1 V @ 1 A
IRD3909

IRD3909

DIODE GEN PURP 50V 30A DO203AB

Vishay General Semiconductor - Diodes Division
2,518 -

RFQ

IRD3909

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Chassis, Stud Mount - 350 ns 80 µA @ 50 V 50 V 30A -40°C ~ 125°C 1.8 V @ 62.8 A
BAT42-TR

BAT42-TR

DIODE SCHOTTKY 30V 200MA DO35

Vishay General Semiconductor - Diodes Division
17,028 -

RFQ

BAT42-TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 7pF @ 1V, 1MHz 5 ns 500 nA @ 25 V 30 V 200mA (DC) 125°C (Max) 650 mV @ 50 mA
BYV27-150-TAP

BYV27-150-TAP

DIODE AVALANCHE 165V 2A SOD57

Vishay General Semiconductor - Diodes Division
15,739 -

RFQ

BYV27-150-TAP

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 25 ns 1 µA @ 165 V 165 V 2A -55°C ~ 175°C 1.07 V @ 3 A
VS-40HFR80

VS-40HFR80

DIODE GEN PURP 800V 40A DO203AB

Vishay General Semiconductor - Diodes Division
101 -

RFQ

VS-40HFR80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 800 V 800 V 40A -65°C ~ 190°C 1.3 V @ 125 A
VS-15MQ040HM3/5AT

VS-15MQ040HM3/5AT

DIODE SCHOTTKY 40V 1.5A DO214AC

Vishay General Semiconductor - Diodes Division
14,786 -

RFQ

VS-15MQ040HM3/5AT

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 134pF @ 10V, 1MHz - 500 µA @ 40 V 40 V 1.5A -40°C ~ 150°C 430 mV @ 1.5 A
VS-40HF120

VS-40HF120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division
101 -

RFQ

VS-40HF120

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 1200 V 1200 V 40A -65°C ~ 190°C 1.3 V @ 125 A
VS-70HFR80

VS-70HFR80

DIODE GEN PURP 800V 70A DO203AB

Vishay General Semiconductor - Diodes Division
3,428 -

RFQ

VS-70HFR80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 800 V 800 V 70A -65°C ~ 180°C 1.35 V @ 220 A
SE30AFJHM3/6A

SE30AFJHM3/6A

DIODE GEN PURP 600V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division
64,655 -

RFQ

SE30AFJHM3/6A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 1.4A (DC) -55°C ~ 175°C 1.1 V @ 3 A
VS-10WQ045FN-M3

VS-10WQ045FN-M3

DIODE SCHOTTKY 45V 10A DPAK

Vishay General Semiconductor - Diodes Division
5,310 -

RFQ

VS-10WQ045FN-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 760pF @ 5V, 1MHz - 1 mA @ 45 V 45 V 10A -40°C ~ 175°C 800 mV @ 20 A
IRD3910

IRD3910

DIODE GEN PURP 100V 30A DO203AB

Vishay General Semiconductor - Diodes Division
2,552 -

RFQ

IRD3910

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Chassis, Stud Mount - 350 ns 80 µA @ 100 V 100 V 30A -40°C ~ 125°C 1.8 V @ 62.8 A
SS2P3L-M3/84A

SS2P3L-M3/84A

DIODE SCHOTTKY 30V 2A DO220AA

Vishay General Semiconductor - Diodes Division
15,537 -

RFQ

SS2P3L-M3/84A

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 2A -55°C ~ 150°C 500 mV @ 2 A
VFT1045BP-M3/4W

VFT1045BP-M3/4W

DIODE SCHOTTKY 45V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
2,091 -

RFQ

VFT1045BP-M3/4W

Scheda tecnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 45 V 45 V 10A (DC) 200°C (Max) 680 mV @ 10 A
VS-MUR1520-M3

VS-MUR1520-M3

DIODE FRED 200V 15A TO220AB

Vishay General Semiconductor - Diodes Division
3,239 -

RFQ

VS-MUR1520-M3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Through Hole - 35 ns 10 µA @ 200 V 200 V 15A -65°C ~ 175°C 1.05 V @ 15 A
IRD3911

IRD3911

DIODE GEN PURP 200V 30A DO203AB

Vishay General Semiconductor - Diodes Division
3,718 -

RFQ

IRD3911

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Chassis, Stud Mount - 350 ns 80 µA @ 200 V 200 V 30A -40°C ~ 125°C 1.8 V @ 62.8 A
IRD3912

IRD3912

DIODE GEN PURP 300V 30A DO203AB

Vishay General Semiconductor - Diodes Division
2,190 -

RFQ

IRD3912

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Chassis, Stud Mount - 350 ns 80 µA @ 300 V 300 V 30A -40°C ~ 125°C 1.8 V @ 62.8 A
VS-1N3209

VS-1N3209

DIODE GEN PURP 100V 15A DO203AB

Vishay General Semiconductor - Diodes Division
3,941 -

RFQ

VS-1N3209

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 100 V 100 V 15A -65°C ~ 175°C 1.5 V @ 15 A
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1500+
1500+ Media giornaliera RFQ
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1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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