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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBR10H90-E3/45DIODE SCHOTTKY 90V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,714 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 90 V | 90 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
1N3611GPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,129 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
VS-60CPF04PBFDIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,133 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 400 V | 400 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
MBR1635HE3/45DIODE SCHOTTKY 35V 16A TO220AB Vishay General Semiconductor - Diodes Division |
2,360 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
|
1N3612GP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,347 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
BYD33MGP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,655 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
VS-60CPF06PBFDIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
|
MBR1645HE3/45DIODE SCHOTTKY 45V 16A TO220AB Vishay General Semiconductor - Diodes Division |
2,871 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
|
1N3612GPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,478 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
BYD33MGPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
VS-60CPF10PBFDIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,855 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | |
|
|
MBR1650-E3/45DIODE SCHOTTKY 50V 16A TO220AB Vishay General Semiconductor - Diodes Division |
3,286 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
|
1N3613GP-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,518 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
BYV26DGPHE3/73DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,732 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
VS-60EPF04PBFDIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,331 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 400 V | 400 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
|
MBR1650HE3/45DIODE SCHOTTKY 50V 16A TO220AB Vishay General Semiconductor - Diodes Division |
3,703 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
|
1N3613GPHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,497 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
BYV26EGPHE3/73DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,375 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
|
VS-60EPF10PBFDIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,795 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | ||
|
|
MBR1660HE3/45DIODE SCHOTTKY 60V 16A TO220AB Vishay General Semiconductor - Diodes Division |
2,738 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A |
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