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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10BQ015-M3/5BTDIODE SCHOTTKY 15V 1A DO214AA Vishay General Semiconductor - Diodes Division |
43,470 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 390pF @ 5V, 1MHz | - | 500 µA @ 15 V | 15 V | 1A | -55°C ~ 125°C | 390 mV @ 2 A | |
|
RS07K-M-08DIODE GP 800V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
194 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 300 ns | 2 µA @ 800 V | 800 V | 500mA | -65°C ~ 175°C | 1.3 V @ 1 A |
|
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VS-10BQ040-M3/5BTDIODE SCHOTTKY 40V 1A SMB Vishay General Semiconductor - Diodes Division |
2,163 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 5V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A | |
|
UF5407-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
166 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
1N3957GP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
|
BYW27-200GP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,860 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
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FGP10D-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,657 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 950 mV @ 1 A |
|
VS-80EPF02PBFDIODE GEN PURP 200V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,705 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 190 ns | 100 µA @ 200 V | 200 V | 80A | -40°C ~ 150°C | 1.25 V @ 80 A | |
|
MBR16H45-E3/45DIODE SCHOTTKY 45V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,651 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A | |
|
|
1N3957GPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,594 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
BYW27-200GPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,019 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
FGP20D-E3/54DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,314 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
|
VS-80EPF04PBFDIODE GEN PURP 400V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,514 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 190 ns | 100 µA @ 400 V | 400 V | 80A | -40°C ~ 150°C | 1.25 V @ 80 A | |
|
|
MBR16H45HE3/45DIODE SCHOTTKY 45V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,586 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A | |
|
|
1N4001GPE-E3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,054 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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BYW27-400GP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,510 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
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|
FGP30D-E3/54DIODE GEN PURP 200V 3A DO204AC Vishay General Semiconductor - Diodes Division |
3,389 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
VS-80EPF10PBFDIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,417 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 80A | -40°C ~ 150°C | 1.35 V @ 80 A | |
|
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MBR16H50-E3/45DIODE SCHOTTKY 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,328 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
|
1N4001GPEHE3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,892 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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