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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V3PM12-M3/HSCHOTTKY RECTIFIER 3A 120V SMP Vishay General Semiconductor - Diodes Division |
769 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 290pF @ 4V, 1MHz | - | 300 µA @ 120 V | 120 V | 1.9A | -40°C ~ 175°C | 620 mV @ 1.5 A |
|
|
VS-2ENH01-M3/84AFRED PT RECTIFIER 2A SMP Vishay General Semiconductor - Diodes Division |
714 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1 V @ 2 A |
|
EGP10BHE3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,814 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
VS-30CPF10PBFDIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,321 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 450 ns | 100 µA @ 1000 V | 1000 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
MBR750HE3/45DIODE SCHOTTKY 50V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,781 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 50 V | 50 V | 7.5A | -65°C ~ 175°C | 750 mV @ 7.5 A | |
|
|
1N4004GPE-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
VSSAF3L45-M3/6ADIODE SCHOTTKY 45V 3A DO221AC Vishay General Semiconductor - Diodes Division |
289 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 425pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A (DC) | -40°C ~ 150°C | 540 mV @ 3 A |
|
|
EGP10C-E3/73DIODE GEN PURP 150V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,940 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
1N5618GP-E3/54DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,930 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 12V, 1MHz | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
VS-30EPF10PBFDIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 450 ns | 100 µA @ 1000 V | 1000 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
MBR760HE3/45DIODE SCHOTTKY 60V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
2,286 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 60 V | 60 V | 7.5A | -65°C ~ 175°C | 750 mV @ 7.5 A | |
|
|
1N4004GPEHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,366 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP10CHE3/73DIODE GEN PURP 150V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,975 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
1N5622GP-E3/54DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 12V, 1MHz | 2 µs | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
VS-60APU06PBFDIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,948 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A | |
|
|
MBR7H35-E3/45DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
2,240 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 35 V | 35 V | 7.5A | -65°C ~ 175°C | 630 mV @ 7.5 A | |
|
|
1N4004GPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,949 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP10D-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
1N5625GP-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,272 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 5 µs | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
|
VS-60CPF02PBFDIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,288 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A |
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