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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DGP15HE3/73DIODE GEN PURP 1.5KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
2,965 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 20 µs | 5 µA @ 1500 V | 1500 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
VS-20ETF02PBFDIODE GEN PURP 200V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,976 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
MBR735-E3/45DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,853 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 175°C | 840 mV @ 15 A | |
|
1N4002GPEHE3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,397 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP10A-E3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,427 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
VS-20ETF08PBFDIODE GEN PURP 800V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,433 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 400 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
|
MBR735HE3/45DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 175°C | 840 mV @ 15 A | |
|
|
1N4002GPHE3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,881 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP10AHE3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,275 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
EGP50G-E3/54DIODE GEN PURP 400V 5A GP20 Vishay General Semiconductor - Diodes Division |
2,729 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 75pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 5A | -65°C ~ 150°C | 1.25 V @ 5 A |
|
|
VS-20ETF12PBFDIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,821 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
MBR745HE3/45DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 175°C | 840 mV @ 15 A | |
|
|
1N4003GPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,909 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
EGP10B-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,147 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
SB040-E3/54DIODE SCHOTTKY 40V 600MA MPG06 Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 40 V | 40 V | 600mA | -65°C ~ 125°C | 550 mV @ 600 mA | |
|
VS-20ETS08FPPBFDIODE GEN PURP 800V 20A TO220FP Vishay General Semiconductor - Diodes Division |
3,585 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
MBR750-E3/45DIODE SCHOTTKY 50V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,794 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 50 V | 50 V | 7.5A | -65°C ~ 175°C | 750 mV @ 7.5 A | |
|
|
1N4004GP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,239 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
1N5627-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
192 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
SS8PH9HM3_A/HDIODE SCHOTTKY 90V 8A TO277A Vishay General Semiconductor - Diodes Division |
900 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 2 µA @ 90 V | 90 V | 8A | -55°C ~ 175°C | 900 mV @ 8 A |
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