+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-10ETF02STRR-M3DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,804 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
MBRB1090-E3/4WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,806 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
V10PM45-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,684 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1850pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 600 mV @ 10 A |
|
UH3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,559 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
BYW74TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,742 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-10ETF04STRL-M3DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,031 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
MBRB1090-E3/8WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
UH3CHE3_A/HDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,018 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
|
BYW84-TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,405 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
VS-10ETF04STRR-M3DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,969 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 480 V | 400 V | 10A | - | 1.2 V @ 10 A | |
|
V20150SG-M3/4WDIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
|
BYM36E-TRDIODE AVALANCHE 1KV 1.5A SOD64 Vishay General Semiconductor - Diodes Division |
2,241 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 150 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.78 V @ 3 A | |
|
|
VS-10ETF06STRR-M3DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,005 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-20TQ035-M3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
3,302 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 730 mV @ 40 A | |
|
|
BYT56K-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,067 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
VS-10ETF10STRL-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,273 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
VS-20TQ040-M3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 730 mV @ 40 A | |
|
|
BYW74TRDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,807 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-10ETF10STRR-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
BYWB29-100-E3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,944 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
