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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYW84-TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,252 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
VS-10ETF12STRR-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,502 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
BYWB29-150-E3/45DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
SF5400-TAPDIODE GEN PURP 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,520 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
BYWB29-200-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
SF5400-TRDIODE GEN PURP 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,206 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
BYV29F-300HE3_A/PDIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,266 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
|
BYWB29-50-E3/45DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,714 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
V35DM120-M3/IDIODE SCHOTTKY 120V 6.3A TO263AC Vishay General Semiconductor - Diodes Division |
2,770 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 120 V | 120 V | 6.3A | -40°C ~ 175°C | 1.05 V @ 35 A |
|
|
BYV29F-400HE3_A/PDIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,629 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
VF20150SG-E3/4WDIODE SCHOTTKY 150V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
3,937 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
VS-HFA08TB60HN3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,671 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
VS-ETL1506-1-M3DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
3,421 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 210 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.07 V @ 15 A |
|
BYW29-150-E3/45DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
AR4PDHM3_A/HDIODE AVALANCHE 200V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
|
|
VS-ETU1506-1-M3DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
4,000 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
|
|
BYW29-50-E3/45DIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,277 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
AR4PDHM3_A/IDIODE AVALANCHE 200V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,974 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
|
|
VS-ETX1506-1-M3DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
2,189 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 36 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.4 V @ 15 A |
|
|
AR4PGHM3_A/HDIODE AVALANCHE 400V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,374 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.6 V @ 4 A |
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