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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V8PM45HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,542 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 8A | -40°C ~ 175°C | 600 mV @ 8 A |
|
VIT1080S-M3/4WDIODE SCHOTTKY 10A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A | |
|
|
V8PM15HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,464 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
|
|
VS-8ETX06-1-M3DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
2,639 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 24 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
|
VI20120SG-E3/4WDIODE SCHOTTKY 120V 20A TO262AA Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
SE12DJHM3/IDIODE GEN PURP 600V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
3,767 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 600 V | 600 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
VB20120SG-E3/8WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,678 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
|
MBRB10100-M3/8WDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,004 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
V20120S-M3/4WDIODE SCHOTTKY 20A 120V TO-220AB Vishay General Semiconductor - Diodes Division |
2,461 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
|
VI20150S-E3/4WDIODE SCHOTTKY 150V 20A TO262AA Vishay General Semiconductor - Diodes Division |
2,368 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A |
|
|
MBRB1090-M3/8WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,461 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
GI1401-E3/45DIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,466 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
VI20120S-E3/4WDIODE SCHOTTKY 120V 20A TO262AA Vishay General Semiconductor - Diodes Division |
3,492 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
|
MBRB10100-M3/4WDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
GI1402-E3/45DIODE GEN PURP 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,687 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
V30DM120-M3/IDIODE SCHOTTKY 120V 6A TO263AC Vishay General Semiconductor - Diodes Division |
2,494 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 120 V | 120 V | 6A | -40°C ~ 175°C | 1.06 V @ 30 A |
|
EGP20B-E3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,409 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
MBRB1090-M3/4WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,563 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
GI1403-E3/45DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
|
VS-12TQ040S-M3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,861 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
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